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AWT6132RM5P8 PDF预览

AWT6132RM5P8

更新时间: 2024-11-17 06:38:47
品牌 Logo 应用领域
ANADIGICS 放大器射频微波功率放大器
页数 文件大小 规格书
8页 401K
描述
415 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module

AWT6132RM5P8 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.69
Is Samacsys:N特性阻抗:50 Ω
构造:COMPONENT增益:25 dB
最大输入功率 (CW):10 dBm最大工作频率:420 MHz
最小工作频率:410 MHz最高工作温度:90 °C
最低工作温度:-30 °C射频/微波设备类型:NARROW BAND MEDIUM POWER
最大电压驻波比:2Base Number Matches:1

AWT6132RM5P8 数据手册

 浏览型号AWT6132RM5P8的Datasheet PDF文件第2页浏览型号AWT6132RM5P8的Datasheet PDF文件第3页浏览型号AWT6132RM5P8的Datasheet PDF文件第4页浏览型号AWT6132RM5P8的Datasheet PDF文件第5页浏览型号AWT6132RM5P8的Datasheet PDF文件第6页浏览型号AWT6132RM5P8的Datasheet PDF文件第7页 
AWT6132R  
415 MHz CDMA 3.4V/29.5dBm  
Linear Power Amplifier Module  
Data Sheet - Rev 2.1  
FEATURES  
InGaP HBT Technology  
High Efficiency 35 % CDMA  
Low Leakage Current (<5 µA)  
SMT Module Package  
50 Input and Output Matching  
Shut Down and Mode Control  
CDMA 2000 1XRTT Compliant  
RoHS Compliant Package, 250 oC MSL-3  
A
W
T6132R  
APPLICATIONS  
CDMA/EVDO 415 MHz Wireless Handsets and  
Data Devices  
M5 Package  
7 Pin 6 mm x 6 mm x 1.5 mm  
Surface Mount Module  
PRODUCT DESCRIPTION  
The AWT6132R is a high power, high efficiency  
amplifier module for CDMA wireless handset  
applications. The device is manufactured on an  
advanced InGaP HBT MMIC technology offering  
state-of-the-art reliability, temperature stability and  
ruggedness.Alow power mode is available to reduce  
power drain on the system battery. The 6 mm x 6  
mm x 1.5 mm laminate package is self contained,  
incorporating 50 input and output matching networks  
optimized for output power, linearity, and efficiency.  
Figure 1: Block Diagram  
10/2008  

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