Datasheet > AWT6130

AWT6130

更新时间： 2024-11-17 08:40:47

品牌	Logo	应用领域
ANADIGICS		放大器射频微波功率放大器蜂窝
页数	文件大小	规格书
8页	196K
描述
Cellular Dual Mode AMPS/CDMA 3.5V 29dBm Power Amplifier Module

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中文翻译

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技术参数
数据手册

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AWT6130 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.71	Is Samacsys：	N
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	25.5 dB	最大输入功率 (CW)：	10 dBm
最大工作频率：	849 MHz	最小工作频率：	824 MHz
最高工作温度：	85 °C	最低工作温度：	-30 °C
射频/微波设备类型：	NARROW BAND LOW POWER	最大电压驻波比：	8
Base Number Matches：	1

AWT6130 数据手册

AWT6130

Cellular Dual Mode AMPS/CDMA 3.5V

29dBm Power Amplifier Module

PRELIMINARY DATA SHEET - Rev 1.0

FEATURES

•

InGaP HBT Technology

High Efficiency: 48% AMPS, 37% CDMA

Low Quiescent Current: 50 mA

Low Leakage Current in Shutdown Mode: <1 µA

Optimized for a 50 Ω System

Low Profile Miniature Surface Mount Package

CDMA 1XRTT Compliant

CDMA 1xEV-DO Compliant

APPLICATIONS

•

Single Mode CDMA Wireless Handsets

Dual Mode AMPS/CDMA Wireless Handsets

Tri Mode CDMA Handsets with GPS

M7 Package

10 Pin 4mm x 4mm

Surface Mount Module

PRODUCT DESCRIPTION

The AWT6130 provides the additional output power

margin RF designers need to overcome additional

post-PA insertion loss in tri-mode handset designs

supporting E911 (GPS enabled). The device is

manufactured on an advanced InGaP HBT MMIC

technology offering state-of-the-art reliability,

temperature stability, and ruggedness. Selectable

bias modes that optimize efficiency for different output

power levels, and a shutdown mode with low leakage

current, increase handset talk and standby time. The

self-contained 4mm x 4mm surface mount package

incorporates matching networks optimized for output

power, efficiency, and linearity in a 50 Ω system.

GND at slug (pad)

REF

GND

RFOUT

GND

Bias Control

VMODE

GND

RFIN

VCC

Figure 1: Block Diagram

06/2003

12 3 4 5 6 7 8

中文翻译

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