Datasheet > AWT6112

AWT6112

更新时间： 2024-11-17 03:19:55

品牌	Logo	应用领域
ANADIGICS		放大器功率放大器蜂窝
页数	文件大小	规格书
12页	362K
描述
Cellular Dual Mode AMPS/CDMA 3.4V/28dBm Linear Power Amplifier Module

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中文翻译

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技术参数
数据手册

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AWT6112 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.64	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	28.5 dB
最大输入功率 (CW)：	10 dBm	最大工作频率：	849 MHz
最小工作频率：	824 MHz	最高工作温度：	110 °C
最低工作温度：	-30 °C	射频/微波设备类型：	NARROW BAND MEDIUM POWER
Base Number Matches：	1

AWT6112 数据手册

AWT6112

Cellular Dual Mode AMPS/CDMA

3.4V/28dBm Linear Power Amplifier Module

PRELIMINARY DATASHEET - Rev 1.6

FEATURES

•

InGaP HBT Technology

High Efficiency: 54% AMPS, 38% CDMA

Low Quiescent Current: 50 mA

Low Leakage Current in Shutdown Mode: <5 µA

Optimized for a 50 Ω System

Low Profile Surface Mount Package: 1.56mm Max

CDMA 1XRTT Compliant

CDMA 1xEV-DO Compliant

RoHS Compliant Package Option, 250 C MSL-3

APPLICATIONS

•

Single Mode CDMA Wireless Handsets

Dual Mode AMPS/CDMA Wireless Handsets

M7 Package

10 Pin 4 mm x 4 mm x 1.5 mm

Surface Mount Module

PRODUCT DESCRIPTION

The AWT6112 is a high power, high efficiency

amplifier module for dual mode AMPS/CDMA

wireless handset applications. The device is

manufactured on an advanced InGaP HBT MMIC

technology offering state-of-the-art reliability,

temperature stability, and ruggedness. Selectable

bias modes that optimize efficiency for different

output power levels, and a shutdown mode with low

leakage current, serve to increase handset talk and

standby time. The self contained 4 mm x 4 mm x 1.5 mm

surface mount package incorporates matching

networks optimized for output power, efficiency and

linearity in a 50 Ω system.

GND at slug (pad)

REF

GND

RFOUT

GND

Bias Control

VMODE

GND

RFIN

VCC

Figure 1: Block Diagram

06/2005

12 3 4 5 6 7...12

中文翻译

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