Datasheet > AWT6108R

AWT6108R

更新时间： 2024-11-17 03:19:55

品牌	Logo	应用领域
ANADIGICS		放大器功率控制功率放大器过程控制系统分布式控制系统 PCS GSM DCS
页数	文件大小	规格书
12页	276K
描述
GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control

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AWT6108R 数据手册

AWT6108R

GSM850/GSM900/DCS/PCS

Quad Band Power Amplifier Module

With Integrated Power Control

PRELIMINARY DATASHEET - Rev 1.0

FEATURES

•

InGaP HBT Technology

Integrated Power Control (CMOS)

Quad Band Applications

+35 dBm GSM Output Power at 3.5 V

+33 dBm DCS/PCS Output Power at 3.5 V

55% GSM PAE

T6108R

50% DCS/PCS PAE

Small Footprint: 7 x 10 mm

Low Profile: 1.4 mm

Power Control Range: >50 dB

GPRS Capable (Class 12)

RoHS Compliant Package, 250 C MSL-3

20 Pin 7 mm x 10 mm x 1.4 mm

Surface Mount Module

APPLICATIONS

•

GSM850/GSM900/DCS/PCS Handsets

•

Dual/Tri/Quad Band PDA

PRODUCT DESCRIPTION

TX_EN and BS, are both 1.8 V and 3 V logic

compliant. The TX_EN is used to enable the

amplifier typically with the TX burst. The BS is used

to select which amplifier is enabled.

This quad band power amplifier module is designed

to support dual, tri and quad band applications. The

module includes an integrated power control

scheme that facilitates fast and easy production

calibration and reduces the number of external

components required to complete a power control

function.

There are two amplifier chains, one to support

GSM850/900 bands, the other for DCS/PCS bands.

All of the RF ports for this device are internally

matched to 50 Ω. Internal DC blocks are provided at

the RF ports.

The amplifier’s power control range is typically

55dB, with the output power set by applying an

analog voltage to V^RAMP. The logical control inputs,

Figure 1: Block Diagram

01/2006

12 3 4 5 6 7...12

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