Datasheet > AWT6108M10P8

AWT6108M10P8

更新时间： 2024-11-16 21:55:07

品牌	Logo	应用领域
ANADIGICS		放大器功率放大器
页数	文件大小	规格书
12页	314K
描述
Quad Band Power Amplifier Module

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AWT6108M10P8 数据手册

AWT6108

GSM850/GSM900/DCS/PCS

Quad Band Power Amplifier Module

With Integrated Power Control

PRELIMINARY DATASHEET - Rev 1.0

FEATURES

InGaP HBT Technology

Integrated Power Control (CMOS)

Quad Band Applications

+35 dBm GSM Output Power at 3.5 V

+33 dBm DCS/PCS Output Power at 3.5 V

55% GSM PAE

T6108

50% DCS/PCS PAE

Small Footprint: 7 x 10mm

Low Profile: 1.4mm

Power Control Range: >50 dB

GPRS Capable (Class 12)

Moisture Sensitivity Level (MSL) 3 at 260 ^°C

20 Pin 7mm x 10mm

Surface Mount Module

APPLICATIONS

GSM850/GSM900/DCS/PCS Handsets

Dual/Tri/Quad Band PDA

PRODUCT DESCRIPTION

TX_EN and BS, are both 1.8 V and 3 V logic

compliant. The TX_EN is used to enable the

amplifier typically with the TX burst. The BS is used

to select which amplifier is enabled.

This quad band power amplifier module is designed

to support dual, tri and quad band applications. The

module includes an integrated power control

scheme that facilitates fast and easy production

calibration and reduces the number of external

components required to complete a power control

function.

There are two amplifier chains, one to support

GSM850/900 bands, the other for DCS/PCS bands.

All of the RF ports for this device are internally

matched to 50 W. Internal DC blocks are provided at

the RF ports.

The amplifiers power control range is typically

55dB, with the output power set by applying an

analog voltage to V^RAMP. The logical control inputs,

Figure 1: Block Diagram

08/2003

12 3 4 5 6 7...12

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