Datasheet > AWE6159RM46P8

AWE6159RM46P8

更新时间： 2024-11-12 12:24:03

品牌	Logo	应用领域
ANADIGICS		放大器射频微波功率放大器 GSM 高功率电源
页数	文件大小	规格书
16页	734K
描述
Quad-band GSM/GPRS/EDGE Power Amplifier Module

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技术参数
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AWE6159RM46P8 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	unknown	风险等级：	5.68
Is Samacsys：	N	其他特性：	IT CAN ALSO OPERATE AT 880 TO 915 MHZ, 1710 TO 1785 MHZ AND 1850 TO 1910 MHZ
特性阻抗：	50 Ω	构造：	COMPONENT
最大输入功率 (CW)：	11 dBm	最大工作频率：	849 MHz
最小工作频率：	824 MHz	最高工作温度：	85 °C
最低工作温度：	-20 °C	射频/微波设备类型：	NARROW BAND HIGH POWER
Base Number Matches：	1

AWE6159RM46P8 数据手册

ꢁWꢀ6159ꢃ

Quad-band GsM/GPꢃs/ꢀDGꢀ

Power Ampliﬁer Module

wiꢄh Inꢄegraꢄed Power Conꢄrol

Data Sheet - Rev 2.2

Fꢀꢁtꢂꢃꢀs

•ꢀ Internal Reference Voltage

•ꢀ Integrated Power Control

•ꢀ InGaP HBT Technology

•ꢀ ESD Protection on All Pins (2.5 kV)

•ꢀ Automatic V^BATTtracking

•ꢀ Low proﬁle 1.0 mm

•ꢀ Small Package Outline 5 mm x 5 mm

•ꢀ EGPRS Capable (class 12)

WE6159R

•

RoHS Compliant Package, 250 ^oC MSL-3

Halogen-Free

GMsK MODꢀ

•ꢀ Integrated power control (CMOS)

•ꢀ +35 dBm GSM850/900 Output Power

•

+33 dBm DCS/PCS Output Power

•ꢀ 53 % GSM 850/900 PAE

49 % DCS/PCS PAE

•

•ꢀ Power control range > 50 dB

M46 Package

11 Pin 5 mm x 5 mm x 1.0 mm

surface Mounꢄ Module

ꢀDGꢀ MODꢀ

•

+29 dBm GSM850/900 Output Power

+28.5 dBm DCS/PCS Output Power

•ꢀ 28% GSM850/900 PAE

•ꢀ 28% DCS/PCS PAE

•ꢀ 64 dB Typical ACPR (400 kHz)

•ꢀ 74 dB Typical ACPR (600 kHz)

Furthermore, the power control function includes

battery detection circuitry for robust ORFS transient

spectrum performance at low battery voltages.

ꢁPPLICꢁtIONs

•

Dual/Tri/Quad Band Handsets and PDAs

Dual/Tri/Quad Band Wireless Data Cards

The amplifier’s power control range is typically

55 dB, with the output power set by applying

an analog voltage to V^RAMP. All of the RF ports

for this device are internally matched to 50ꢀ .

PꢃODꢂCt DꢀsCꢃIPtION

This power ampliﬁer module supports dual, tri and

quad band applications for GMSK and 8-PSK modu-

lation schemes using a polar architecture. There are

two ampliﬁer chains, one to support GSM850/900

bands, the other for DCS/PCS bands. Each ampliﬁca-

tion chain is optimized for excellent EDGE efﬁciency,

power, and linearity in a Polar loop environment while

maintaining high efﬁciency in the GSM/GPRS mode.

DCS/PCS

DCS/PCS_IN

DCS/PCS_OUT

TX_EN

VBATT

Bias/Power

Control

The module includes an internal reference voltage

and integrated power control scheme for use in both

GMSK and 8-PSK operation. This facilitates fast and

easy production calibration and reduces the number

of external components required to complete a power

control function.

VRAMP

GSM850/900_IN

GSM850/900_OUT

GSM850/900

Figure 1: Block Diagram

01/2012

12 3 4 5 6 7...16

中文翻译

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与AWE6159RM46P8相关器件

型号	品牌	获取价格	描述	数据表
AWE6159RM46P9	ANADIGICS	获取价格	Quad-band GSM/GPRS/EDGE Power Amplifier Module
AWF1600-10RFI	TTELEC	获取价格	Tubular Vitreous Enamelled Wirewound Resistors
AWF1600-10RGI	TTELEC	获取价格	Tubular Vitreous Enamelled Wirewound Resistors
AWF1600-10RJI	TTELEC	获取价格	Tubular Vitreous Enamelled Wirewound Resistors
AWF1600-10RKI	TTELEC	获取价格	Tubular Vitreous Enamelled Wirewound Resistors
AWF1601-10RFI	TTELEC	获取价格	Tubular Vitreous Enamelled Wirewound Resistors
AWF1601-10RGI	TTELEC	获取价格	Tubular Vitreous Enamelled Wirewound Resistors
AWF1601-10RJI	TTELEC	获取价格	Tubular Vitreous Enamelled Wirewound Resistors
AWF1601-10RKI	TTELEC	获取价格	Tubular Vitreous Enamelled Wirewound Resistors
AWF1602-10RFI	TTELEC	获取价格	Tubular Vitreous Enamelled Wirewound Resistors

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