Datasheet > AVF250_07

AVF250_07

更新时间： 2022-10-12 02:23:33

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
2页	25K
描述
NPN SILICON RF POWER TRANSISTOR

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AVF250_07 数据手册

AVF250

NPN SILICON RF POWER TRANSISTOR

PACKAGE STYLE .400 2NL FLG

DESCRIPTION:

.025 x 45°

4x .062 x 45°

The ASI AVF250 is a high power Class-

C transistor designed for IFF/BME/TACAN

applications in 1025-1150 MHz range.

ØD

FEATURES:

• 50 V operation

• Internal Input/Output Matching Networks

• P_G= 8.0 dB at 250 W/1090 MHz

• Omnigold™ Metalization System

• 5:1 VSWR capability

MINIMUM

inches mm

MAXIMUM

inches mm

DIM

.020 / 0.51

.100 / 2.54

.376 / 9.55

.110 / 2.79

.395 / 10.03

.030 / 0.76

.396 / 10.06

.130 / 3.30

.407 / 10.34

.193 / 4.90

.450 / 11.43

.125 / 3.18

MAXIMUM RATINGS

.640 / 16.26

.890 / 22.61

.395 / 10.03

.004 / 0.10

.052 / 1.32

.118 / 3.00

.660 / 16.76

.910 / 23.11

.415 / 10.54

.007 / 0.18

.072 / 1.83

.131 / 3.33

.230 / 5.84

20 A

I_C

V_CC

P_DISS

T_J

50 V

575 W @ T_C= 25 °C

-65 °C to +250 °C

-65 °C to +200 °C

0.28 °C/W

ORDER CODE: ASI10571

T_STG

θ_JC

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 35 mA

I_C= 25 mA

I_E= 15 mA

BV_CES

BV_EBO

I_CES

4.0

_CE= 50 V

_CE= 5.0 V

---

I_C= 1.0 A

200

h_FE

8.5

P_G

V_CC= 50 V P_OUT= 250 W

P_IN= 40 W

f = 1030 - 1090 MHz

η_C

Pulse Width = 20 µs, Duty Cycle = 5 %

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. C

1/2

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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