Datasheet > AVD400_07

AVD400_07

更新时间： 2024-11-26 08:40:43

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
3页	54K
描述
NPN SILICON RF POWER TRANSISTOR

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AVD400_07 数据手册

AVD400

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

PACKAGE STYLE .400 2L FLG (A)

The ASI AVD400 is a silicon NPN power

transistor, designed for high power and

low duty cycle DME and IFF applications.

4x .062 x 45°

.040 x 45°

2xB

2xR

FEATURES:

• Internal Input/Output Matching Networks

• P_G= 6.5 dB at 400 W/1150 MHz

• Omnigold™ Metalization System

MINIMUM

inches mm

MAXIMUM

inches mm

DIM

.135 / 3.43

.100 / 2.54

.050 / 1.27

.376 / 9.55

.110 / 2.79

.395 / 10.03

.145 / 3.68

.120 / 3.05

MAXIMUM RATINGS

.396 / 10.06

.130 / 3.30

.407 / 10.34

22 A

55 V

I_C

V_CC

P_DISS

T_J

.193 / 4.90

.100 / 2.54

.490 / 12.45

.510 / 12.95

.690 / 17.53

.890 / 22.61

.003 / 0.08

.052 / 1.32

.118 / 3.00

.710 / 18.03

.910 / 23.11

.006 / 0.18

.072 / 1.83

.131 / 3.33

.230 / 5.84

1458 W @ T_C= 25 °C

-65 °C to +200 °C

0.12 °C/W

T_STG

θ_JC

ORDER CODE: ASI10567

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 25 mA

I_C= 50 mA

I_E= 10 mA

BV_CES

BV_EBO

I_CES

3.5

_CE= 50 V

_CE= 5.0 V

---

I_C= 0.25 A

200

h_FE

6.5

P_G

V_CC= 50 V

P_IN= 90 W

P_OUT= 400 W

f = 1025 - 1150 MHz

η_C

Pulse Width = 10 µsec, Duty Cycle = 1 %

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. C

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/3

Specifications are subject to change without notice.

12 3

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