Datasheet > AVD350_07

AVD350_07

更新时间： 2024-11-23 08:40:43

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
2页	38K
描述
NPN SILICON RF POWER TRANSISTOR

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AVD350_07 数据手册

AVD350

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

PACKAGE STYLE .400 2NL FLG

The ASI AVD350 is high power Class C

transistor, designed for avionics

applications in 960-1215 MHz

.025 x 45°

4x .062 x 45°

ØD

FEATURES:

• Internal Input/Output Matching Networks

• P_G= 7.0 dB at 350 W/1150 MHz

• Omnigold™ Metalization System

• 3:1 Load VSWR Capability

MINIMUM

inches mm

MAXIMUM

inches mm

DIM

.020 / 0.51

.100 / 2.54

.376 / 9.55

.110 / 2.79

.395 / 10.03

.030 / 0.76

.396 / 10.06

.130 / 3.30

.407 / 10.34

MAXIMUM RATINGS

40 A

55 V

.193 / 4.90

.450 / 11.43

.125 / 3.18

I_C

V_CC

P_DISS

T_J

.640 / 16.26

.890 / 22.61

.395 / 10.03

.004 / 0.10

.052 / 1.32

.118 / 3.00

.660 / 16.76

.910 / 23.11

.415 / 10.54

.007 / 0.18

.072 / 1.83

.131 / 3.33

.230 / 5.84

1450 W @ T_C= 25 °C

-65 °C to +200 °C

0.12 °C/W

T_STG

θ_JC

ORDER CODE: ASI10566

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CES

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 50 mA

I_E= 25 mA

2.5

BV_EBO

h_FE

_CE= 5.0 V

I_C= 1.0 A

120

---

7.0

7.5

P_G

V_CC= 50 V

P_IN= 70 W

P_OUT= 350 W

f = 960-1215 MHz

η_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV.C

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/2

Specifications are subject to change without notice.

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