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AVD250

更新时间: 2024-11-22 22:05:59
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 21K
描述
NPN SILICON RF POWER TRANSISTOR

AVD250 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
风险等级:5.13外壳连接:BASE
最大集电极电流 (IC):17.8 A配置:SINGLE
最小直流电流增益 (hFE):15最高频带:L BAND
JESD-30 代码:R-CDFM-F2元件数量:1
端子数量:2最高工作温度:250 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):600 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

AVD250 数据手册

  
AVD250  
NPN SILICON RF POWER TRANSISTOR  
PACKAGE STYLE .400 2NL FLG  
A
DESCRIPTION:  
.025 x 45°  
4x .062 x 45°  
2X  
B
The ASI AVD250 is Designed for  
Ø D  
C
E
F
FEATURES:  
G
H
L
I
J
· Input Matching Network  
K
·
P
N
· Omnigold™ Metalization System  
M
MINIMUM  
inches mm  
MAXIMUM  
inches mm  
DIM  
/
/
.020 / 0.51  
.100 / 2.54  
.376 / 9.55  
.110 / 2.79  
.395 / 10.03  
.030 / 0.76  
A
B
C
D
E
F
G
H
I
MAXIMUM RATINGS  
.396 / 10.06  
.130 / 3.30  
.407 / 10.34  
17.8 A  
IC  
.193 / 4.90  
.450 / 11.43  
.125 / 3.18  
55 V  
VCC  
PDISS  
TJ  
.640 / 16.26  
.890 / 22.61  
.395 / 10.03  
.004 / 0.10  
.052 / 1.32  
.118 / 3.00  
.660 / 16.76  
.910 / 23.11  
.415 / 10.54  
.007 / 0.18  
.072 / 1.83  
.131 / 3.33  
.230 / 5.84  
600 W @ TC £ 80 OC  
-65 OC to +250 OC  
-65 OC to +200 OC  
0.2 OC/W  
J
K
L
M
N
P
TSTG  
qJC  
ORDER CODE: ASI10565  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCBO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 10 mA  
IC = 25 mA  
IE = 1 mA  
65  
V
BVCER  
BVEBO  
ICES  
RBE = 10 W  
65  
V
3.5  
V
VCE = 50 V  
VCE = 5.0 V  
25  
mA  
---  
hFE  
IC = 1.0 A  
15  
120  
PG  
6.2  
40  
dB  
%
VCC = 50 V  
MHz  
POUT = 250 W  
f = 1025 - 1150  
hC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
1/1  
Specifications are subject to change without notice.  

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