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AMMP-5024 PDF预览

AMMP-5024

更新时间: 2024-02-20 15:22:41
品牌 Logo 应用领域
安华高科 - AVAGO 射频和微波射频放大器微波放大器
页数 文件大小 规格书
11页 667K
描述
30kHz - 40 GHz Traveling Wave Amplifier

AMMP-5024 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.7特性阻抗:50 Ω
构造:COMPONENT增益:12.5 dB
最大输入功率 (CW):17 dBm最大工作频率:40000 MHz
最小工作频率:0.03 MHz射频/微波设备类型:WIDE BAND MEDIUM POWER
Base Number Matches:1

AMMP-5024 数据手册

 浏览型号AMMP-5024的Datasheet PDF文件第2页浏览型号AMMP-5024的Datasheet PDF文件第3页浏览型号AMMP-5024的Datasheet PDF文件第4页浏览型号AMMP-5024的Datasheet PDF文件第5页浏览型号AMMP-5024的Datasheet PDF文件第6页浏览型号AMMP-5024的Datasheet PDF文件第7页 
AMMP-5024  
30kHz – 40 GHz Traveling Wave Amplifier  
Data Sheet  
Features  
Description  
Surface Mount Package 5.0 x 5.0 x 2.0 mm  
Wide Frequency Range 30kHz – 40GHz  
High Gain: 14.8 dB Typical @ 22GHz  
Output P1dB: 22 dBm Typical @ 22GHz  
50 Ohm Input and Output Match  
Avago Technologies’ AMMP-5024 is a broadband PHEMT  
GaAs MMICTWA designed for medium output power and  
high gain over the full 30 KHz to 40 GHz frequency range.  
The design employs a 9-stage, cascade-connected FET  
structure to ensure flat gain and power as well as uniform  
group delay. E-beam lithography is used to produce  
uniform gate lengths of 0.15um and MBE technology  
assures precise semiconductor layer control.  
[1]  
Applications  
Pin  
Function  
Pin Connections (Top View)  
Broadband Test and Measurement Applications  
Notes:  
1. Use in hermetic assemblies only.  
V
aux  
2
Not Used  
Not Used  
3
4
RF / Vdd  
out  
5
V
Attention:  
Observe precautions for handling  
electrostatic sensitive devices.  
gꢀ  
6
Not Used  
7
V
g2  
RF  
in  
8
RoHS-Exemption  
ESD Machine Model (Class A): 40V  
ESD Human Body Model (Class 0): ꢀ50V  
Refer to Avago Application Note A004R:  
Electrostatic Discharge Damage and Control.  
Please refer to Hazardous substances table on page 11.  
[1]  
Table 1. Absolute Maximum Ratings  
Symbol  
Parameters and Test Conditions  
Unit  
Minimum  
Maximum  
V
Positive Drain Voltage  
Total Drain Current  
First Gate Voltage  
First Gate Current  
Second Gate Voltage  
Second Gate Current  
CW Input Power  
Operating Channel Temperature  
Storage Case Temperature  
Maximum Assembly Temperature (20 sec max)  
V
mA  
V
mA  
V
mA  
dBm  
°C  
-
-
ꢀ0  
380  
0
4
-
ꢀ7  
+ꢀ50  
+ꢀ50  
+260  
dd  
I
dd  
V
-9.5  
-38  
-3.5  
-20  
-
-
-65  
-
gꢀ  
I
gꢀ  
V
g2  
I
g2  
P
in  
T
ch  
T
°C  
°C  
stg  
T
max  
Note:  
1) Operation in excess of any one of these conditions may result in permanent damage to this device. The absolute maximum ratings  
for DC and Power parameters were determined at an ambient temperature of 25°C unless noted otherwise.  

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