Datasheet > 射频和微波 > 射频/微波放大器> AMMP-5024-TR2G

AMMP-5024-TR2G

更新时间： 2024-01-30 09:36:40

品牌	Logo	应用领域
安华高科 - AVAGO		射频和微波射频放大器微波放大器
页数	文件大小	规格书
11页	667K
描述
30kHz - 40 GHz Traveling Wave Amplifier

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技术参数
数据手册

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AMMP-5024-TR2G 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	LCC8,.2SQ,28	Reach Compliance Code：	compliant
ECCN代码：	3A001.B.2.D	HTS代码：	8542.39.00.01
风险等级：	5.17	Is Samacsys：	N
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	12.5 dB	最大输入功率 (CW)：	17 dBm
JESD-609代码：	e4	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	8
最大工作频率：	40000 MHz	最小工作频率：	0.03 MHz
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	LCC8,.2SQ,28
电源：	7 V	射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers	表面贴装：	YES
技术：	GAAS	端子面层：	Nickel/Gold (Ni/Au)
Base Number Matches：	1

AMMP-5024-TR2G 数据手册

AMMP-5024

30kHz – 40 GHz Traveling Wave Ampliﬁer

Data Sheet

Features

Description

• Surface Mount Package 5.0 x 5.0 x 2.0 mm

• Wide Frequency Range 30kHz – 40GHz

• High Gain: 14.8 dB Typical @ 22GHz

• Output P1dB: 22 dBm Typical @ 22GHz

• 50 Ohm Input and Output Match

Avago Technologies’ AMMP-5024 is a broadband PHEMT

GaAs MMICTWA designed for medium output power and

high gain over the full 30 KHz to 40 GHz frequency range.

The design employs a 9-stage, cascade-connected FET

structure to ensure ﬂat gain and power as well as uniform

group delay. E-beam lithography is used to produce

uniform gate lengths of 0.15um and MBE technology

assures precise semiconductor layer control.

[1]

Applications

ꢀ

Function

Pin Connections (Top View)

• Broadband Test and Measurement Applications

Notes:

1. Use in hermetic assemblies only.

aux

Not Used

RF / Vdd

out

Attention:

Observe precautions for handling

electrostatic sensitive devices.

gꢀ

Not Used

RoHS-Exemption

ESD Machine Model (Class A): 40V

ESD Human Body Model (Class 0): ꢀ50V

Refer to Avago Application Note A004R:

Electrostatic Discharge Damage and Control.

Please refer to Hazardous substances table on page 11.

[1]

Table 1. Absolute Maximum Ratings

Symbol

Parameters and Test Conditions

Unit

Minimum

Maximum

Positive Drain Voltage

Total Drain Current

First Gate Voltage

First Gate Current

Second Gate Voltage

Second Gate Current

CW Input Power

Operating Channel Temperature

Storage Case Temperature

Maximum Assembly Temperature (20 sec max)

dBm

°C

ꢀ0

380

ꢀ

ꢀ7

+ꢀ50

+260

-9.5

-38

-3.5

-20

-65

gꢀ

°C

stg

max

Note:

1) Operation in excess of any one of these conditions may result in permanent damage to this device. The absolute maximum ratings

for DC and Power parameters were determined at an ambient temperature of 25°C unless noted otherwise.

ꢀ

12 3 4 5 6 7...11

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