Datasheet > 射频和微波 > 射频/微波放大器> AMMC-5618-W50

AMMC-5618-W50

更新时间： 2024-02-09 17:10:15

品牌	Logo	应用领域
安华高科 - AVAGO		射频和微波射频放大器微波放大器
页数	文件大小	规格书
8页	280K
描述
6 - 20 GHz Amplifier

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AMMC-5618-W50 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	DIE OR CHIP	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.33.00.01
风险等级：	5.23	其他特性：	HIGH RELIABILITY
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	12.5 dB	最大输入功率 (CW)：	20 dBm
功能数量：	1	最大工作频率：	20000 MHz
最小工作频率：	6000 MHz	封装等效代码：	DIE OR CHIP
电源：	5 V	射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers	最大压摆率：	140 mA

AMMC-5618-W50 数据手册

AMMC - 5618

6 - 20 GHz Ampliﬁer

Data Sheet

Description

Avago Technologies’ AMMC-5618 6-20 GHz MMIC is an

eﬃcient two-stage ampliﬁer designed to be used as a

cascadable intermediate gain block for EW applications.

In communication systems, it can be used as a LO buﬀer,

or as a transmit driver ampliﬁer. It is fabricated using a

PHEMT integrated circuit structure that provides excep-

tional eﬃciency and ﬂat gain performance. During typi-

cal operation with a single 5-V supply, each gain stage

is biased for Class-A operation for optimal power output

with minimal distortion. The RF input and output have

matching circuitry for use in 50-W environments. The

backside of the chip is both RF and DC ground. This helps

simplify the assembly process and reduces assembly re-

lated performance variations and costs. For improved re-

liability and moisture protection, the die is passivated at

the active areas. The MMIC is a cost eﬀective alternative

to hybrid (discrete FET) ampliﬁers that require complex

tuning and assembly processes.

Chip Size: 920 x 920 µm (36.2 x 36.2 mils)

Chip Size Tolerance: ± 10µm (±0.4 mils)

Chip Thickness: 100 ± 10µm (4 ± 0.4 mils)

Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger)

Features

•

Frequency Range: 6 - 20 GHz

AMMC-5618 Absolute Maximum Ratings [1]

High Gain: 14.5 dB Typical

Symbol Parameters/ Conditions Units Min. Max.

Output Power: 19.5 dBm Typical

Input and Output Return Loss: < -12 dB

Flat Gain Response: ± 0.3 dB Typical

Single Supply Bias: 5 V @ 107 mA

V_D1, V_D2Drain Supply Voltage

V_G1

V_G2

I_D1

I_D2

P_in

T_ch

T_b

Optional Gate Voltage

Drain Supply Current

RF Input Power

-5

dBm

°C

Applications

•

Driver/Buﬀer in microwave communication systems

Channel Temp.

+150

Cascadable gain stage for EW systems

Phased array radar and transmit ampliﬁers

Operating Backside

Temp.

°C

-55

T_stg

Storage Temp.

°C

-65 +165

+300

T_max

Maximum Assembly

Temp. (60 sec max)

Note:

1. Operation in excess of any one of these conditions may result in

permanent damage to this device.

Note: These devices are ESD sensitive. The following precautions are strongly recommended:

Ensure that an ESD approved carrier is used when dice are transported from one destination to another.

Personal grounding is to be worn at all times when handling these devices.

12 3 4 5 6 7 8

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与AMMC-5618-W50相关器件

型号	品牌	描述	获取价格	数据表
AMMC-5620	AGILENT	Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier	获取价格
AMMC-5620	AVAGO	6 - 20 GHz High Gain Amplifier	获取价格
AMMC-5620-W10	AGILENT	Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier	获取价格
AMMC-5620-W10	AVAGO	6 - 20 GHz High Gain Amplifier	获取价格
AMMC-5620-W50	AVAGO	6 - 20 GHz High Gain Amplifier	获取价格
AMMC-5620-W50	AGILENT	Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier	获取价格

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