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AMMC-5040-W50 PDF预览

AMMC-5040-W50

更新时间: 2024-01-05 18:00:41
品牌 Logo 应用领域
安华高科 - AVAGO 射频和微波射频放大器微波放大器功率放大器
页数 文件大小 规格书
10页 374K
描述
20-45 GHz GaAs Amplifier

AMMC-5040-W50 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.13特性阻抗:50 Ω
构造:COMPONENT增益:20 dB
最大输入功率 (CW):21 dBm最大工作频率:45000 MHz
最小工作频率:20000 MHz射频/微波设备类型:WIDE BAND MEDIUM POWER
Base Number Matches:1

AMMC-5040-W50 数据手册

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AMMC-5040  
2045 GHz GaAs Amplifier  
Data Sheet  
Description  
Features  
The AMMC-5040 is a high gain broadband amplifier • Frequency range: 2045 GHz  
designed for both military applications and commercial  
communication systems. This four-stage amplifier has  
input and output matching circuitry for use in 50 ohm  
environments. It is fabricated using PHEMT integrated  
circuit structures that provide exceptional broadband  
• High gain: 25 dB  
• Gain flatness: ±±.5 dB  
Return loss:  
Input: ±7 dB, Output: ±± dB  
performance. The backside of this chip is both RF and DC • Output power:  
ground. This simplifies the assembly process and reduces  
assembly related performance variations and costs. For  
improved reliability and moisture protection, the die is  
passivated at the active areas.This MMIC is a cost effective  
alternative to hybrid (discrete-FET) amplifiers that require  
complex tuning and assembly process.  
P-±dB = 2± dBm at 38 GHz  
P-3dB = 22.5 dBm at 38 GHz  
Applications  
• Broadband gain block  
• Broadband driver amplifier  
• Point-to-point radio  
• LMDS  
• EW  
• Instrumentation  
• Frequency Multiplier (X2 and X3)  
Chip Size:  
±720 x 760 µm (67.7 x 29.9 mils)  
Chip Size Tolerance: ±±0 µm (±0.4 mils)  
Chip Thickness:  
Pad Dimensions:  
±00 ± ±0 µm (4 ± 0.4 mils)  
75 x 75 µm (3 ± 0.4 mils)  
Absolute Maximum Ratings[1]  
Symbol  
Parameters/Conditions  
Units  
Min. Max.  
VD±,2-3-4  
VG±,2-3-4  
IDD  
Drain Voltage  
V
5
Gate Voltage  
V
-3.0  
0.5  
Total Drain Current  
CW Input Power  
mA  
dBm  
550  
2±  
Pin  
Tch  
Operating Channel Temperature °C  
Operating Backside Temperature °C  
+±60  
+75  
+±65  
+300  
Tb  
-55  
-65  
Tstg  
Storage Temperature  
°C  
Tmax  
Notes:  
Max. Assembly Temp (60 sec max) °C  
±. Operation in excess of any one of these conditions may result in  
permanent damage to this device.  

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