@vic
AV966
TO-92MOD Plastic-Encapsulate Transistors
TO-92MOD
AV966 TRANSISTOR( PNP )
1.EMITTER
FEATURE
Power dissipation
PCM : 0.9
Collector current
ICM : -1.5
2.COLLECTOR
3.BASE
W(Tamb=25℃)
A
Collector-base voltage
V(BR)CBO : -30
V
123
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
-30
-30
-5
MAX
UNIT
V
Ic= -1mA , IE=0
IC= -10 mA , IB=0
IE= -1mA, IC=0
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
V
μA
μA
VCB= -30 V , IE=0
-0.1
-0.1
320
-2
IEBO
VEB= -5V , IC=0
hFE(1)
DC current gain
VCE=-2 V, IC= -500mA
IC= -1.5A, IB= -0.03A
IC= -500 mA, VCE= -2V
VCE= -2 V, IC= -500mA
100
100
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
V
V
-1
Transition frequency
f
MHz
T
CLASSIFICATION OF hFE
(1)
Rank
O
Y
Range
100-200
160-320
Copyright @vic Electronics Corp.
1
Website http://www.avictek.com