@vic
AV965
TO-92 Plastic-Encapsulate Transistors
TO— 92
AV965 TRANSISTOR( NPN )
FEATURES
1.EMITTER
Power dissipation
PCM : 0.75
Collector current
ICM
2. COLLECTOR
3. BASE
W(Tamb=25℃)
:
5
A
V
1 2 3
Collector-base voltage
V(BR)CBO : 42
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
Ic=1mA, IE=0
Ic= mA, IB=0
conditions
MIN
42
22
6
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
V
1
IE= 10 μA, IC=0
VCB= 30 V , IE=0
0.1
0.1
μA
μA
Emitter cut-off current
IEBO
VEB= 6 V, IC=0
VCE= 2 V, IC= 0.15
mA
HFE(1)
HFE(2)
HFE(3)
VCE(sat)
150
340
150
DC current gain
VCE= 2V, IC = 500 mA
950
VCE= 2V,
mA
IC = 2000
Collector-emitter saturation voltage
IC=3000mA,IB=100 mA
0.35
V
CLASSIFICATION OF H
FE(2)
Rank
R
T
Range
340-600
560-950
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1
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