Datasheet > AV9015LT1

AV9015LT1

更新时间： 2022-12-17 02:00:04

品牌	Logo	应用领域
AVICTEK		晶体晶体管
页数	文件大小	规格书
1页	39K
描述
SOT-23 Plastic-Encapsulate Transistors

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AV9015LT1 数据手册

@vic

SOT-23 Plastic-Encapsulate Transistors

AV9015LT1 TRANSISTOR (PNP)

SOT-23

1. BASE

FEATURES

2. EMITTER

3. COLLECTOR

Power dissipation

P_CM:

0.2

W (Tamb=25℃)

Collector current

I_CM:

2. 4

1. 3

-0.1

Collector-base voltage

V_(BR)CBO

-50

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

Unit: mm

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic= -100µA, I_E=0

Ic= -0.1mA, I_B=0

MIN

-50

-45

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=-100µA, I_C=0

V_CB=-50V, I_E=0

-0.1

1000

-0.3

-1

µA

I_EBO

V_EB= -5V, I_C=0

Emitter cut-off current

h_FE(1)

V_CE=-5V, I_C= -1mA

I_C=-100mA, I_B= -10mA

I_C=-100mA, I_B=-10mA

200

150

DC current gain

V_CE(sat)

V_BE(sat)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE=-5V, I_C= -10mA

MHz

Transition frequency

f_T

f=30MHz

CLASSIFICATION OF h_FE(1)

Rank

Range

200-450

450-1000

DEVICE MARKING

S9015LT1=M6

Website http://www.avictek.com

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