Datasheet > AV2222

AV2222

更新时间： 2022-12-17 01:59:47

品牌	Logo	应用领域
AVICTEK		晶体放大器晶体管
页数	文件大小	规格书
5页	215K
描述
Amplifier Transistors PN Silicon

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数据手册

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AV2222 数据手册

@vic

AV2222

NPN Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

CEO

CBO

EBO

Vdc

6.5

600

Vdc

TO–92

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector–Emitter Breakdown Voltage

6.0

—

Vdc

(BR)CEO

(I = 10 mAdc, I = 0)

Collector–Base Breakdown Voltage

(I = 10 Adc, I = 0)

(BR)CBO

Emitter–Base Breakdown Voltage

(I = 10 Adc, I = 0)

Vdc

(BR)EBO

Collector Cutoff Current

(V = 60 Vdc, V

nAdc

µAdc

CEX

= 3.0 Vdc)

CE EB(off)

Collector Cutoff Current

CBO

= 60 Vdc, I = 0)

—

0.01

= 60 Vdc, I = 0, T = 150°C)

Emitter Cutoff Current

(V = 3.0 Vdc, I = 0)

—

nAdc

EBO

Collector Cutoff Current

(V = 10 V)

CEO

Base Cutoff Current

(V = 60 Vdc, V

BEX

= 3.0 Vdc)

CE EB(off)

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