Datasheet > AUSCD32H

AUSCD32H

更新时间： 2022-02-26 13:27:34

品牌	Logo	应用领域
智威 - ZOWIE		/
页数	文件大小	规格书
2页	40K
描述
Schottky Barrier Diode

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AUSCD32H 数据手册

ZOWIE

Schottky Barrier Diode

(20V~40V / 3.0A)

AUSCD32H AND AUSCD34H

OUTLINE DIMENSIONS

FEATURES

Case : 2010

Halogen-free type

Unit : mm

Compliance to RoHS product

Lead less chip form, no lead damage

Low power loss, High efficiency

High current capability, low VF

Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

Mounting Pad Layout

4.5 ± 0.1

2.60

MAX.

Comply with AEC-Q101

1.47

MIN.

APPLICATION

1.27

MIN.

0.95 ± 0.2

Switching mode power supply applications

Portable equipment battery applications

High frequency rectification

DC / DC Converter

5.14

REF.

Telecommunication

Automotive

Equivalent : SMA

DO-214AC

MECHANICAL DATA

Case : Packed with FRP substrate and epoxy underfilled

Terminals : Pure Tin plated (Lead-Free),

solderable per MIL-STD-750, Method 2026.

Polarity : Laser Cathode band marking

Weight : 0.02 gram

MARKING

SCD

.₃₂.

PACKING

Voltage class: 2 = 20V, 4 = 40V

3,000 pieces per 7" (178mm ± 2mm) reel

4 reels per box

6 boxes per carton

Absolute Maximum Ratings (Ta = 25 ^oC)

ITEM

Rating

Symbol

Conditions

Unit

AUSCD32H

AUSCD34H

Repetitive peak reverse voltage

Average forward current

VRRM

IF(AV)

3.0

Peak forward surge current

IFSM

8.3ms single half sine-wave

^oC

Operating junction temperature Range

Storage temperature Range

-55 to +125

-55 to +150

TSTG

Electrical characteristics (Ta = 25 ^oC)

ITEM

Symbol

Conditions

Type

Min.

Typ.

Max.

Unit

SCD32H

IF = 1.0A

IF = 3.0A

0.37

0.46

Forward voltage (NOTE 1)

0.50

SCD34H

Repetitive peak reverse current

Junction capacitance

IRRM

VR = Max. VRRM , Ta = 25 ^oC

0.02

0.20

VR = 4V, f = 1.0 MHz

160

Rth(JA)

Rth(JL)

Junction to ambient (NOTE 2)

Junction to lead (NOTE 2)

^oC/W

Thermal resistance

NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.

(2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas.

REV. 3

2013/08

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