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AUIRGS4062D1TRR

更新时间: 2024-09-15 02:51:39
品牌 Logo 应用领域
英飞凌 - INFINEON 软恢复二极管快速软恢复二极管
页数 文件大小 规格书
14页 647K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

AUIRGS4062D1TRR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.63
最大集电极电流 (IC):59 A集电极-发射极最大电压:600 V
最大降落时间(tf):40 ns门极发射器阈值电压最大值:6.5 V
门极-发射极最大电压:20 V湿度敏感等级:1
最高工作温度:175 °C峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):246 W
最大上升时间(tr):41 ns子类别:Insulated Gate BIP Transistors
表面贴装:YES处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

AUIRGS4062D1TRR 数据手册

 浏览型号AUIRGS4062D1TRR的Datasheet PDF文件第2页浏览型号AUIRGS4062D1TRR的Datasheet PDF文件第3页浏览型号AUIRGS4062D1TRR的Datasheet PDF文件第4页浏览型号AUIRGS4062D1TRR的Datasheet PDF文件第5页浏览型号AUIRGS4062D1TRR的Datasheet PDF文件第6页浏览型号AUIRGS4062D1TRR的Datasheet PDF文件第7页 
AUIRGB4062D1  
AUIRGS4062D1  
AUIRGSL4062D1  
AUTOMOTIVE GRADE  
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE  
Features  
Low VCE (on) Trench IGBT Technology  
Low Switching Losses  
5µs short circuit SOA  
Square RBSOA  
VCES = 600V  
IC(Nominal) = 24A  
tSC 5µs, TJ(max) = 175°C  
100% of the parts tested for ILM  
VCE(on) typ. = 1.57V  
Positive VCE (on) Temperature Coefficient.  
Ultra Fast Soft Recovery Co-pak Diode  
Tighter Distribution of Parameters  
Lead-Free, RoHS Compliant  
C
C
C
Automotive Qualified *  
E
C
E
E
G
Benefits  
C
C
G
G
High Efficiency in a Wide Range of Applications  
Suitable for a Wide Range of Switching Frequencies due to  
Low VCE (ON) and Low Switching Losses  
Rugged Transient Performance for Increased Reliability  
Excellent Current Sharing in Parallel Operation  
Low EMI  
AUIRGS4062D1  
D2Pak  
AUIRGSL4062D1  
TO-262Pak  
AUIRGB4062D1  
TO-220AB  
G
C
E
Gate  
Collector  
Emitter  
Applications  
Air Conditioning Compressor  
Standard Pack  
Form  
Tube  
Tube  
Tube  
Base Part Number  
Package Type  
Orderable Part Number  
Quantity  
AUIRGB4062D1  
AUIRGSL4062D1  
TO-220  
TO-262  
50  
50  
50  
800  
800  
AUIRGB4062D1  
AUIRGSL4062D1  
AUIRGS4062D1  
AUIRGS4062D1TRL  
AUIRGS4062D1TRR  
AUIRGS4062D1  
D2 Pak  
Tape and Reel Left  
Tape and Reel Right  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional  
operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated condi-  
tions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air  
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Max.  
600  
59  
Units  
VCES  
IC @ TC = 25°C  
V
IC @ TC = 100°C  
Continuous Collector Current  
39  
IC (Nominal)  
Nominal Current  
24  
ICM  
ILM  
Pulse Collector Current VGE =15V  
Clamped Inductive Load Current VGE =20V  
Diode Continuous Forward Current  
Diode Continuous Forward Current  
Maximum Repetitive Forward Current   
Continuous Gate-to-Emitter Voltage  
Transient Gate-to-Emitter Voltage  
Maximum Power Dissipation  
72  
96  
59  
39  
A
IF @ TC = 25°C  
IF @ TC = 100°C  
IFM  
VGE  
96  
±20  
±30  
246  
123  
-55 to +175  
V
PD @ TC = 25°C  
PD @ TC = 100°C Maximum Power Dissipation  
TJ  
TSTG  
W
°C  
Operating Junction and  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting Torque, 6-32 or M3 Screw  
300 (0.063 in.(1.6mm) from case)  
10 lbf·in (1.1 N·m)  
Thermal Resistance  
Parameter  
Min.  
Typ.  
Max.  
Units  
Thermal Resistance Junction-to-Case (IGBT)   
–––  
–––  
0.61  
RJC (IGBT)  
Thermal Resistance Junction-to-Case (Diode)   
Thermal Resistance, Case-to-Sink (flat, greased surface)  
Thermal Resistance, Junction-to-Ambient (typical socket mount)  
–––  
–––  
–––  
–––  
0.50  
62  
1.2  
–––  
–––  
RJC (Diode)  
RCS  
RJA  
°C/W  
* Qualification standards can be found at www.infineon.com  
1
2017-08-31  

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