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AUIRGS30B60KTRR

更新时间： 2024-09-14 14:47:51
品牌 Logo 应用领域
英飞凌 - INFINEON 电动机控制栅晶体管
页数 文件大小 规格书
15页 305K
描述
Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

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AUIRGS30B60KTRR 技术参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：D2PAK-3Reach Compliance Code：compliant
风险等级：5.64Is Samacsys：N
外壳连接：COLLECTOR最大集电极电流 (IC)：78 A
集电极-发射极最大电压：600 V配置：SINGLE
最大降落时间（tf）：42 ns门极发射器阈值电压最大值：5.5 V
门极-发射极最大电压：20 VJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：370 W
认证状态：Not Qualified最大上升时间（tr）：39 ns
子类别：Insulated Gate BIP Transistors表面贴装：YES
端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：MOTOR CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：237 ns标称接通时间 (ton)：74 ns
Base Number Matches：1

AUIRGS30B60KTRR 数据手册

 浏览型号AUIRGS30B60KTRR的Datasheet PDF文件第2页浏览型号AUIRGS30B60KTRR的Datasheet PDF文件第3页浏览型号AUIRGS30B60KTRR的Datasheet PDF文件第4页浏览型号AUIRGS30B60KTRR的Datasheet PDF文件第5页浏览型号AUIRGS30B60KTRR的Datasheet PDF文件第6页浏览型号AUIRGS30B60KTRR的Datasheet PDF文件第7页 
PD - 96334  
AUTOMOTIVE GRADE  
AUIRGS30B60K  
AUIRGSL30B60K  
VCES = 600V  
INSULATED GATE BIPOLAR TRANSISTOR  
C
Features  
• Low VCE(on) Non Punch Through IGBT Technology  
• 10µs Short Circuit Capability  
• Square RBSOA  
IC = 50A, TC=100°C  
atTJ=175°C  
G
t
sc > 10µs, TJ=150°C  
• Positive VCE(on) Temperature Coefficient  
• Maximum Junction Temperature rated at 175°C  
• Lead-Free, RoHS Compliant  
• Automotive Qualified *  
E
VCE(on) typ. = 1.95V  
n-channel  
Benefits  
• Benchmark Efficiency for Motor Control  
• Rugged Transient Performance  
• Low EMI  
D2Pak  
AUIRGS30B60K  
TO-262  
AUIRGSL30B60K  
• Excellent Current Sharing in Parallel Operation  
G
C
E
Gate  
Collector  
Emitter  
AbsoluteMaximumRatings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the  
device. These are stress ratings only; and functional operation of the device at these or any other condition  
beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions  
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are  
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise  
specified  
Parameter  
Collector-to-Emitter Voltage  
Max.  
600  
Units  
V
VCES  
Continuous Collector Current  
Continuous Collector Current  
Pulse Collector Current (Ref.Fig.C.T.5)  
Clamped Inductive Load current  
RMS Isolation Voltage, Terminal to Case, t=1 min.  
Gate-to-Emitter Voltage  
78  
IC @ TC = 25°C  
50  
A
IC @ TC = 100°C  
120  
ICM  
120  
ILM  
2500  
±20  
V
VISOL  
VGE  
Maximum Power Dissipation  
370  
W
PD @ TC = 25°C  
Maximum Power Dissipation  
180  
PD @ TC = 100°C  
Operating Junction and  
-55 to +175  
TJ  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
°C  
TSTG  
300 (0.063 in. (1.6mm) from case)  
Thermal / Mechanical Characteristics  
Parameter  
Min.  
–––  
–––  
–––  
–––  
Typ.  
–––  
Max.  
0.41*  
–––  
Units  
Rθ  
JC  
Rθ  
CS  
Rθ  
JA  
Junction-to-Case- IGBT  
°C/W  
Case-to-Sink, flat, greased surface  
Junction-to-Ambient (PCB Mount, Steady State)  
Weight  
0.50  
–––  
40  
1.44  
–––  
g
Wt  
* RθJC (end of life) = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C  
and is accounted for by the physical wearout of the die attach medium.  
www.irf.com  
1
10/14/10  
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