Datasheet > AUIRGS30B60KTRL

AUIRGS30B60KTRL

更新时间： 2024-09-15 03:41:15

品牌	Logo	应用领域
英飞凌 - INFINEON		电动机控制栅晶体管
页数	文件大小	规格书
15页	305K
描述
Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

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AUIRGS30B60KTRL 数据手册

PD - 96334

AUTOMOTIVE GRADE

AUIRGS30B60K

AUIRGSL30B60K

V_CES= 600V

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Low V_CE(on)Non Punch Through IGBT Technology

• 10µs Short Circuit Capability

• Square RBSOA

I_C= 50A, T_C=100°C

atT_J=175°C

_sc> 10µs, T_J=150°C

• Positive V_CE(on)Temperature Coefficient

• Maximum Junction Temperature rated at 175°C

• Lead-Free, RoHS Compliant

• Automotive Qualified *

V_CE(on)typ. = 1.95V

n-channel

Benefits

• Benchmark Efficiency for Motor Control

• Rugged Transient Performance

• Low EMI

D²Pak

AUIRGS30B60K

TO-262

AUIRGSL30B60K

• Excellent Current Sharing in Parallel Operation

Gate

Collector

Emitter

AbsoluteMaximumRatings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. These are stress ratings only; and functional operation of the device at these or any other condition

beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions

for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are

measured under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise

specified

Parameter

Collector-to-Emitter Voltage

Max.

600

Units

V_CES

Continuous Collector Current

Pulse Collector Current (Ref.Fig.C.T.5)

Clamped Inductive Load current

RMS Isolation Voltage, Terminal to Case, t=1 min.

Gate-to-Emitter Voltage

I_C@ T_C= 25°C

I_C@ T_C= 100°C

120

I_CM

120

I_LM

2500

±20

V_ISOL

V_GE

Maximum Power Dissipation

370

P_D@ T_C= 25°C

Maximum Power Dissipation

180

P_D@ T_C= 100°C

Operating Junction and

-55 to +175

T_J

Storage Temperature Range

Soldering Temperature, for 10 sec.

°C

T_STG

300 (0.063 in. (1.6mm) from case)

Thermal / Mechanical Characteristics

Parameter

Min.

–––

Typ.

–––

Max.

0.41*

–––

Units

R_θ

Junction-to-Case- IGBT

°C/W

Case-to-Sink, flat, greased surface

Junction-to-Ambient (PCB Mount, Steady State)

Weight

0.50

–––

1.44

–––

* R_θJC(end of life) = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C

and is accounted for by the physical wearout of the die attach medium.

www.irf.com

10/14/10

12 3 4 5 6 7...15

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与AUIRGS30B60KTRL相关器件

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AUIRGS30B60KTRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRGS4062D1	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRGS4062D1TRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 59A I(C), 600V V(BR)CES, N-Channel
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AUIRGSL30B60K	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, TO-262AA, ROHS COMP
AUIRGSL4062D1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 59A I(C), 600V V(BR)CES, N-Channel
AUIRGU4045D	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRL1404L	INFINEON	获取价格	AUTOMOTIVE GRADE
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