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AUIRGR4045DTR PDF预览

AUIRGR4045DTR

更新时间： 2024-09-14 12:55:59
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管双极型晶体管功率控制双极性晶体管栅超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
15页 458K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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中文翻译

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AUIRGR4045DTR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC, DPAK-3Reach Compliance Code：compliant
风险等级：5.64Is Samacsys：N
外壳连接：COLLECTOR最大集电极电流 (IC)：12 A
集电极-发射极最大电压：600 V配置：SINGLE WITH BUILT-IN DIODE
最大降落时间（tf）：22 ns门极发射器阈值电压最大值：6.5 V
门极-发射极最大电压：20 VJEDEC-95代码：TO-252AA
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：77 W
认证状态：Not Qualified最大上升时间（tr）：15 ns
子类别：Insulated Gate BIP Transistors表面贴装：YES
端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：127 ns标称接通时间 (ton)：38 ns
Base Number Matches：1

AUIRGR4045DTR 数据手册

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PD - 97637  
AUTOMOTIVE GRADE  
AUIRGR4045D  
AUIRGU4045D  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
C
VCES = 600V  
IC = 6.0A, TC = 100°C  
VCE(on) typ. = 1.7V  
Features  
• Low VCE (on) Trench IGBT Technology  
• Low Switching Losses  
• Maximum Junction temperature 175 °C  
• 5µs SCSOA  
• Square RBSOA  
• 100% of the parts tested for ILM  
G
E

n-channel  
• Positive VCE (on) Temperature Coefficient.  
• Ultra Fast Soft Recovery Co-pak Diode  
• Tighter Distribution of Parameters  
• Lead-Free, RoHS Compliant  
C
• Automotive Qualified*  
E
E
C
G
Benefits  
G
D-Pak  
AUIRGR4045D  
I-Pak  
AUIRGU4045D  
• High Efficiency in a Wide Range of Applications  
• Suitable for a Wide Range of Switching Frequencies due  
to Low VCE (ON) and Low Switching Losses  
• Rugged Transient Performance for Increased Reliability  
• Excellent Current Sharing in Parallel Operation  
• Low EMI  
G
Gate  
C
E
Colletor  
Emitter  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Collector-to-Emitter Breakdown Voltage  
Continuous Collector Current  
Units  
V
Max.  
600  
VCES  
12  
6.0  
18  
IC@ TC = 25°C  
IC@ TC = 100°C  
ICM  
Continuous Collector Current  
Pulsed Collector Current, VGE = 15V  
Clamped Inductive Load Current, VGE = 20V  
Diode Continuous Forward Current  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
24  
ILM  
A
8.0  
4.0  
24  
IF@TC=25°C  
IF@TC=100°C  
IFM  
± 20  
± 30  
77  
Continuous Gate-to-Emitter Voltage  
Transient Gate-to-Emitter Voltage  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction and  
V
VGE  
PD @ TC =25°  
PD @ TC =100°  
TJ  
W
39  
°C  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
300 (0.063 in. (1.6mm) from case)  
Thermal Resistance  
Parameter  
Junction-to-Case - IGBT  
Junction-to-Case - Diode  
Min.  
–––  
–––  
–––  
–––  
Typ.  
–––  
–––  
–––  
–––  
Max.  
1.9  
Units  
RθJC  
Rθ  
6.8  
JC  
°C/W  
RθJA  
50  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
Rθ  
110  
JA  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com  
02/14/11  
1234567...15

中文翻译

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