Datasheet > 晶体管 > IGBT> AUIRGR4045D

AUIRGR4045D

更新时间： 2024-09-14 12:55:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管双极型晶体管双极性晶体管栅超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
15页	458K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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中文翻译

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数据手册

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AUIRGR4045D 数据手册

PD - 97637

AUTOMOTIVE GRADE

AUIRGR4045D

AUIRGU4045D

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

V_CES= 600V

I_C= 6.0A, T_C= 100°C

V_{CE(on) typ.}= 1.7V

Features

• Low V_{CE (on)}Trench IGBT Technology

• Low Switching Losses

• Maximum Junction temperature 175 °C

• 5µs SCSOA

• Square RBSOA

• 100% of the parts tested for I_LM

n-channel

• Positive V_{CE (on)}Temperature Coefficient.

• Ultra Fast Soft Recovery Co-pak Diode

• Tighter Distribution of Parameters

• Lead-Free, RoHS Compliant

• Automotive Qualified*

Benefits

D-Pak

AUIRGR4045D

I-Pak

AUIRGU4045D

• High Efficiency in a Wide Range of Applications

• Suitable for a Wide Range of Switching Frequencies due

to Low V_{CE (ON)}and Low Switching Losses

• Rugged Transient Performance for Increased Reliability

• Excellent Current Sharing in Parallel Operation

• Low EMI

Gate

Colletor

Emitter

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Units

Max.

600

V_CES

6.0

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

Continuous Collector Current

Pulsed Collector Current, V_GE= 15V

Clamped Inductive Load Current, V_GE= 20V

Diode Continuous Forward Current

Diode Maximum Forward Current

I_LM

8.0

4.0

I_F@T_C=25°C

I_F@T_C=100°C

I_FM

± 20

± 30

Continuous Gate-to-Emitter Voltage

Transient Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

V_GE

P_D@ T_C=25°

P_D@ T_C=100°

T_J

°C

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (0.063 in. (1.6mm) from case)

Thermal Resistance

Parameter

Junction-to-Case - IGBT

Junction-to-Case - Diode

Min.

–––

Typ.

–––

Max.

1.9

Units

R_θJC

R_θ

6.8

°C/W

R_θJA

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

R_θ

110

*Qualification standards can be found at http://www.irf.com/

www.irf.com

02/14/11

12 3 4 5 6 7...15

中文翻译

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与AUIRGR4045D相关器件

型号	品牌	获取价格	描述	数据表
AUIRGR4045DTR	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRGR4045DTRL	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRGR4045DTRR	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRGS30B60K	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRGS30B60KTRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRGS30B60KTRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRGS4062D1	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRGS4062D1TRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 59A I(C), 600V V(BR)CES, N-Channel
AUIRGS4062D1TRR	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRGSL30B60K	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, TO-262AA, ROHS COMP

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