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AUIRGPS4070D0

更新时间： 2024-09-14 20:54:07
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网栅功率控制晶体管
页数 文件大小 规格书
11页 833K
描述
Insulated Gate Bipolar Transistor, 195A I(C), 600V V(BR)CES, N-Channel, TO-247AA,

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AUIRGPS4070D0 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：2.23外壳连接：COLLECTOR
最大集电极电流 (IC)：195 A集电极-发射极最大电压：600 V
配置：SINGLE WITH BUILT-IN DIODEJEDEC-95代码：TO-247AA
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL参考标准：AEC-Q101
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：285 ns标称接通时间 (ton)：150 ns
Base Number Matches：1

AUIRGPS4070D0 数据手册

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AUTOMOTIVE GRADE  
AUIRGPS4070D0  
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE  
Features  
Low VCE (on) Trench IGBT Technology  
Low Switching Losses  
6µs SCSOA  
Square RBSOA  
VCES = 600V  
IC = 160A, TC = 100°C  
tsc 6µs, TJ(MAX) = 175°C  
100% of the parts tested for ILM  
V
CE(on) typ. = 1.70V  
Positive VCE (on) Temperature Coefficient  
Soft Recovery Co-pak Diode  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
C
Benefits  
E
High Efficiency in a Wide Range of Applications  
Suitable for Applications in the Low to Mid-Range Frequencies  
Rugged Transient Performance for Increased Reliability  
Excellent Current Sharing in Parallel Operation  
Low EMI  
C
G
Super-247A  
G
C
E
Gate  
Collector  
Emitter  
Standard Pack  
Base Part Number  
Package Type  
Orderable Part Number  
Form  
Quantity  
AUIRGPS4070D0  
Super-247  
Tube  
25  
AUIRGPS4070D0  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress rat-  
ings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Parameter  
Max.  
600  
240  
160  
Units  
V
VCES  
IC @ TC = 25°C  
IC @ TC = 100°C  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Nominal Current  
INOMINAL  
ICM  
ILM  
IF NOMINAL  
IFM  
VGE  
120  
Pulse Collector Current, VGE = 15V  
Clamped Inductive Load Current, VGE = 20V   
Diode Nominal Current   
Diode Maximum Forward Current   
Continuous Gate-to-Emitter Voltage  
Transient Gate-to-Emitter Voltage  
Maximum Power Dissipation  
360  
480  
120  
480  
±20  
±30  
750  
375  
A
V
PD @ TC = 25°C  
PD @ TC = 100°C Maximum Power Dissipation  
W
TJ  
TSTG  
Operating Junction and  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
-55 to +175  
°C  
300 (0.063 in. (1.6mm) from case)  
Thermal Resistance  
Parameter  
Typ.  
Max. Units  
Thermal Resistance Junction-to-Case (each IGBT)   
Thermal Resistance Junction-to-Case (each Diode)   
Thermal Resistance, Case-to-Sink (flat, greased surface)  
Thermal Resistance, Junction-to-Ambient (typical socket mount)  
–––  
0.20  
RJC (IGBT)  
RJC (Diode)  
RCS  
–––  
0.24  
–––  
0.45  
°C/W  
–––  
40  
RJA  
* Qualification standards can be found at www.infineon.com  
1
2016-12-12  
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