Datasheet > ATV06B9V0JB-G

ATV06B9V0JB-G

更新时间： 2024-11-26 14:33:31

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
6页	124K
描述
Trans Voltage Suppressor Diode,

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中文翻译

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技术参数
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ATV06B9V0JB-G 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.78
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	30	Base Number Matches：	1

ATV06B9V0JB-G 数据手册

SMD Transient Voltage Suppressor

ATV06B5V0-G Thru. ATV06B441-G

Working Peak Reverse voltage: 5.0 to 440Volts

Power Dissipation: 600 Watts

RoHS Device

Features

SMB/DO-214AA

-Glass passivated chip.

-600W peak pulse power capability with a 10/1000μs

-waveform, repetitive rate (duty cycle): 0.01%.

-Low leakage.

0.155(3.94)

0.130(3.30)

0.087(2.20)

0.077(1.96)

-Uni and Bidirectional unit.

-Excellent clamping capability.

-Very fast response time.

0.191(4.85)

0.171(4.35)

-Comply with AEC-Q101.

-UL recognized file # E349157

-Range: ATV06B5V0J(B) thru. ATV06B400J(B)

0.012(0.30)

0.006(0.15)

0.096(2.44)

0.083(2.13)

0.008(0.20)

0.001(0.02)

Mechanical Data

0.060(1.52)

0.030(0.75)

-Case: JEDEC DO-214AA, molded plastic.

0.216(5.50)

0.201(5.10)

-Epoxy: UL 94V-0 rate flame retardant.

-Terminals: solderable per MIL-STD-750,

method 2026

Dimensions in inches and (millimeter)

-Polarity: Color band denotes cathode end

except Bipolar.

-Mounting position: Any.

-Weight: 0.108 gram (approx.)

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Value

Parameter

Symbol

Units

Peak power dissipation with a 10/1000μs

waveform (Note 1)

PPP

600

Watts

Peak pulse current with a 10/1000μs

IPP

See Next Table

5.0

Watts

waveform (Note 1)

Power dissipation on infinite heatsink at

TL=75°C

Peak forward surge current, 8.3ms single

half sine-wave unidirectional only (Note 2)

IFSM

100

Maximum instantaneous forward voltage

at 50 A for unidirectional only (Note 3)

3.5／5.0

-55 to +150

Operating junction and

Storage temperature range

TJ, TSTG

°C

Note:

1. Non-repetitive current pulse per Fig. 5 and derated above TA=25°C per Fig.1

2. Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum.

3. VF<3.5V for devices of VBR <200V and VF <5.0V for devices of VBR >201V

Company reserves the right to improve product design , functions and reliability without notice.

REV:B

AQW-BTV02

Page 1

Comchip Technology CO., LTD.

12 3 4 5 6

中文翻译

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与ATV06B9V0JB-G相关器件

型号	品牌	获取价格	描述	数据表
ATV06B9V0J-G	COMCHIP	获取价格	Trans Voltage Suppressor Diode,
ATV1	CONNOR-WINFIELD	获取价格	14 PIN DIP CMOS/TTL TCXO
ATV1000	ASI	获取价格	Variable Capacitance Diode, 2.7pF C(T), Silicon, Abrupt, SOT-23, 3 PIN
ATV1000CC	ASI	获取价格	Variable Capacitance Diode, 2.7pF C(T), Silicon, Abrupt, SOT-23, 3 PIN
ATV1001	ASI	获取价格	Variable Capacitance Diode, 3.3pF C(T), Silicon, Abrupt, SOT-23, 3 PIN
ATV1002	ASI	获取价格	Variable Capacitance Diode, 3.9pF C(T), Silicon, Abrupt, SOT-23, 3 PIN
ATV1002CC	ASI	获取价格	Variable Capacitance Diode, 3.9pF C(T), Silicon, Abrupt, SOT-23, 3 PIN
ATV1003	ASI	获取价格	Variable Capacitance Diode, 4.7pF C(T), Silicon, Abrupt, SOT-23, 3 PIN
ATV1003CC	ASI	获取价格	Variable Capacitance Diode, 4.7pF C(T), Silicon, Abrupt, SOT-23, 3 PIN
ATV1004	ASI	获取价格	Variable Capacitance Diode, 5.6pF C(T), Silicon, Abrupt, SOT-23, 3 PIN

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