是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.71 |
风险等级: | 5.31 | 最长访问时间: | 120 ns |
其他特性: | CAN ALSO BE OPERATED AT 4.5V TO 5.5V RANGE | 备用内存宽度: | 8 |
I/O 类型: | COMMON | JESD-30 代码: | R-PDSO-G48 |
JESD-609代码: | e0 | 长度: | 18.4 mm |
内存密度: | 8388608 bit | 内存集成电路类型: | OTP ROM |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 48 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 512KX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP1 |
封装等效代码: | TSSOP48,.8,20 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 240 | 电源: | 3/5 V |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
最大待机电流: | 0.00002 A | 子类别: | OTP ROMs |
最大压摆率: | 0.04 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子节距: | 0.5 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
宽度: | 12 mm | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
AT27BV800-12RI | ATMEL | 8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM |
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AT27BV800-12TC | ATMEL | 8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM |
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AT27BV800-12TI | ATMEL | 8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM |
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AT27BV800-15JC | ATMEL | 8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM |
获取价格 |
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AT27BV800-15JI | ATMEL | 8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM |
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AT27BV800-15RC | ATMEL | 8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM |
获取价格 |