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5962-8959847VZC PDF预览

5962-8959847VZC

更新时间: 2024-02-22 22:27:45
品牌 Logo 应用领域
爱特美尔 - ATMEL 静态存储器
页数 文件大小 规格书
15页 337K
描述
Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM

5962-8959847VZC 数据手册

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Features  
Operating Voltage: 5V  
Access Time: 30, 45 ns  
Very Low Power Consumption  
– Active: 250 mW (Typ)  
– Standby: 1 µW (Typ)  
– Data Retention: 0.5 µW (Typ)  
Wide Temperature Range: -55°C to +125°C  
400 Mils Width Packages: FP32 and SB32  
TTL Compatible Inputs and Outputs  
Asynchronous  
Single 5V Supply  
Equal Cycle and Access Time  
Gated Inputs:  
Rad. Tolerant  
128K x 8  
– No Pull-up/down  
Very Low Power  
5V CMOS SRAM  
– Resistors Are Required  
QML Q and V with SMD 5962-89598  
ESCC B with Specification 9301/047  
Description  
M65608E  
The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.  
Atmel brings the solution to applications where fast computing is as mandatory as low  
consumption, such as aerospace electronics, portable instruments, or embarked  
systems.  
Utilizing an array of six transistors (6T) memory cells, the M65608E combines an  
extremely low standby supply current (Typical value = 0.2 µA) with a fast access time  
at 30 ns over the full military temperature range. The high stability of the 6T cell pro-  
vides excellent protection against soft errors due to noise.  
The M65608E is processed according to the methods of the latest revision of the MIL  
STD 883 (class B or S), ESA SCC 9000 or QML.  
Rev. 4151I–AERO–03/04  
1

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