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5962-895647VZX PDF预览

5962-895647VZX

更新时间: 2023-05-15 00:00:00
品牌 Logo 应用领域
爱特美尔 - ATMEL 静态存储器
页数 文件大小 规格书
12页 240K
描述
Standard SRAM, 128KX8, 30ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, DIP-32

5962-895647VZX 数据手册

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Features  
Operating voltage: 5V  
Access time: 30, 45ns  
Very low power consumption  
– active: 250mW (Typ)  
– standby: 1 µW (Typ)  
– data retention: 0.5 µW (Typ)  
Wide temperature Range: -55°C to +125°C  
400Mils width package  
TTL compatible inputs and outputs  
Asynchronous  
Single 5 volt supply  
Equal Cycle and access time  
Gated inputs:  
no pull-up/down  
resistors are required  
QML Q and V with SMD 5962-89598  
Rad Tolerant  
5V 128 K x 8  
Very Low Power  
CMOS SRAM  
Description  
The M65608E is a very low power CMOS static RAM organized as 131072 x 8bits.  
M65608E  
Atmel Wireless & Microcontrollers brings the solution to applications where fast com-  
puting is as mandatory as low consumption, such as aerospace electronics, portable  
instruments, or embarked systems.  
Utilizing an array of six transistors (6T) memory cells, the M65608E combines an  
extremely low standby supply current (Typical value= 20µA) with a fast access time at  
30ns over the full military temperature range. The high stability of the 6T cell provides  
excellent protection against soft errors due to noise.  
The M65608E is processed according to the methods of the latest revision of the MIL  
STD 883 (class B or S), ESA SCC 9000 or QML.  
Rev. F–20-Aug-01  
1

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