Features
• Operating voltage: 5V
• Access time: 30, 45ns
• Very low power consumption
– active: 250mW (Typ)
– standby: 1 µW (Typ)
– data retention: 0.5 µW (Typ)
• Wide temperature Range: -55°C to +125°C
• 400Mils width package
• TTL compatible inputs and outputs
• Asynchronous
• Single 5 volt supply
• Equal Cycle and access time
• Gated inputs:
– no pull-up/down
– resistors are required
• QML Q and V with SMD 5962-89598
Rad Tolerant
5V 128 K x 8
Very Low Power
CMOS SRAM
Description
The M65608E is a very low power CMOS static RAM organized as 131072 x 8bits.
M65608E
Atmel Wireless & Microcontrollers brings the solution to applications where fast com-
puting is as mandatory as low consumption, such as aerospace electronics, portable
instruments, or embarked systems.
Utilizing an array of six transistors (6T) memory cells, the M65608E combines an
extremely low standby supply current (Typical value= 20µA) with a fast access time at
30ns over the full military temperature range. The high stability of the 6T cell provides
excellent protection against soft errors due to noise.
The M65608E is processed according to the methods of the latest revision of the MIL
STD 883 (class B or S), ESA SCC 9000 or QML.
Rev. F–20-Aug-01
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