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5962-0622903VYC PDF预览

5962-0622903VYC

更新时间: 2024-02-09 11:02:00
品牌 Logo 应用领域
爱特美尔 - ATMEL 存储内存集成电路静态存储器异步传输模式ATM
页数 文件大小 规格书
19页 376K
描述
Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi- Chip Module

5962-0622903VYC 技术参数

生命周期:Active包装说明:QFF,
Reach Compliance Code:compliantECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.5
Is Samacsys:N最长访问时间:25 ns
JESD-30 代码:S-CQFP-F68长度:24.14 mm
内存密度:16777216 bit内存集成电路类型:STANDARD SRAM
内存宽度:32功能数量:1
端子数量:68字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:512KX32封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:QFF封装形状:SQUARE
封装形式:FLATPACK并行/串行:PARALLEL
认证状态:Qualified座面最大高度:4.7 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:FLAT端子节距:1.27 mm
端子位置:QUAD宽度:24.14 mm
Base Number Matches:1

5962-0622903VYC 数据手册

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Features  
16 Mbit SRAM Multi Chip Module  
Allows 32-, 16- or 8-bit access configuration  
Operating Voltage: 3.3V + 0.3V, 5V Tolerant  
Access Time:  
– 25 ns, 20 ns  
– 18 ns (preliminary information)  
Very Low Power Consumption  
– Active: 595 mW per byte (Max) @ 20 ns(1), 415mW per byte (Max) @ 50ns(2)  
– Standby: 15 mW (Typ)  
Military Temperature Range: -55 to +125°C  
TTL-Compatible Inputs and Outputs  
Asynchronous  
Die manufactured on Atmel 0.25 µm Radiation Hardened Process  
No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2  
Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019  
ESD Better than 2000V  
Rad Hard  
16 MegaBit 3.3V  
5V Tolerant  
SRAM Multi-  
Chip Module  
Quality Grades:  
– QML-Q or V with SMD 5962-06229  
– ESCC  
950 Mils Wide MQFP 68 Package  
Mass : 8.5 grams  
Notes: 1. For AT68166FT-20 only. 540mW for AT68166FT-25.  
2. For AT68166FT-20 only. 450mW for AT68166FT-25.  
AT68166FT  
Description  
The AT68166FT is a 16Mbit SRAM packaged in a hermetic Multi Chip Module (MCM)  
for space applications.  
The AT68166FT MCM incorporates four 4Mbit AT60142FT SRAM dice. It can be orga-  
nized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of 512Kx8. It  
combines rad-hard capabilities, a latch-up threshold of 80MeV.cm²/mg, a Multiple Bit  
Upset immunity and a total dose tolerance of 300Krads, with a fast access time.  
The MCM packaging technology allows a reduction of the PCB area by 50% with a  
weight savings of 75% compared to four 4Mbit packages.  
Thanks to the small size of the 4Mbit SRAM die, Atmel has been able to accommo-  
date the assembly of the four dice on one side of the package which facilitates the  
power dissipation.  
The compatibility with other products allows designers to easily migrate to the Atmel  
AT68166FT memory.  
The AT68166FT is powered at 3.3V and is 5V tolerant.  
The AT68166FT is processed according to the test methods of the latest revision of  
the MIL-PRF-38535 or the ESCC 9000.  
7531H–AERO–04/09  

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