Datasheet > 存储 > SRAM> 5962-0520802VYC

5962-0520802VYC

更新时间： 2024-01-12 06:26:54

品牌	Logo	应用领域
爱特美尔 - ATMEL		内存集成电路静态存储器
页数	文件大小	规格书
13页	347K
描述
Rad Hard 512K x 8 Very Low Power CMOS SRAM

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5962-0520802VYC 数据手册

Features

• Operating Voltage: 3.3V

• Access Time:

– 15 ns (AT60142F)

• Very Low Power Consumption

– Active: 650 mW (Max) @ 15 ns, 540 mW (Max) @ 25 ns

– Standby: 3.3 mW (Typ)

• Wide Temperature Range: -55 to +125°C

• TTL-Compatible Inputs and Outputs

• Asynchronous

• Designed on 0.25 µm Radiation Hardened Process

• No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm²

• Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019

• 500 Mils Wide FP36 Package

Rad Hard

512K x 8

• ESD Better than 4000V

Very Low Power

CMOS SRAM

• Quality Grades: ESCC with 9301/052, QML-Q or V with smd 5962-05208

Description

The AT60142F is a very low power CMOS static RAM organized as 524 288 x 8 bits.

Atmel brings the solution to applications where fast computing is as mandatory as low

consumption, such as aerospace electronics, portable instruments, or embarked

systems.

AT60142F

Utilizing an array of six transistors (6T) memory cells, the AT60142F combines an

extremely low standby supply current (Typical value = 1 mA) with a fast access time at

15 ns or better over the full military temperature range. The high stability of the 6T cell

provides excellent protection against soft errors due to noise.

The AT60142F is processed according to the methods of the latest revision of the MIL

PRF 38535 or ESCC 9000.

It is produced on a radiation hardened 0.25 µm CMOS process.

Rev. 4408G–AERO–04/09

12 3 4 5 6 7...13

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