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5962-0520801VYC PDF预览

5962-0520801VYC

更新时间: 2024-02-08 12:46:20
品牌 Logo 应用领域
爱特美尔 - ATMEL 存储内存集成电路静态存储器异步传输模式ATM
页数 文件大小 规格书
13页 291K
描述
Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM

5962-0520801VYC 技术参数

生命周期:Transferred零件包装代码:DFP
包装说明:DFP,针数:36
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.34
最长访问时间:17 nsJESD-30 代码:R-XDFP-F36
JESD-609代码:e4内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:36
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:512KX8
封装主体材料:UNSPECIFIED封装代码:DFP
封装形状:RECTANGULAR封装形式:FLATPACK
并行/串行:PARALLEL认证状态:Qualified
筛选级别:MIL-PRF-38535 Class V座面最大高度:3.05 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:GOLD端子形式:FLAT
端子节距:1.27 mm端子位置:DUAL
宽度:12.195 mmBase Number Matches:1

5962-0520801VYC 数据手册

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Features  
Operating Voltage: 3.3V, 5V tolerant  
Access Time:  
– 17 ns  
– 15 ns  
Very Low Power Consumption  
– Active: 610 mW (Max) @ 17 ns(1), 540 mW (Max) @ 25 ns  
– Standby: 3.3 mW (Typ)  
Wide Temperature Range: -55 to +125°C  
TTL-Compatible Inputs and Outputs  
Asynchronous  
Designed on 0.25 µm Radiation Hardened Process  
No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2  
Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019  
500 Mils Wide FP36 Package  
Rad Hard  
512K x 8  
5V Tolerant  
Very Low Power  
CMOS SRAM  
ESD Better than 2000V  
Quality Grades: ESCC with 9301/052, QML-Q or V with smd 5962-05208  
Note:  
1. 650 mW (Max) @ 15 ns  
Description  
The AT60142FT is a very low power CMOS static RAM organized as 512K x 8 bits.  
Atmel brings the solution to applications where fast computing is as mandatory as low  
consumption, such as aerospace electronics, portable instruments, or embarked  
systems.  
AT60142FT  
Utilizing an array of six transistors (6T) memory cells, the AT60142FT combines an  
extremely low standby supply current (Typical value = 1 mA) with a fast access time at  
15 ns over the full military temperature range. The high stability of the 6T cell provides  
excellent protection against soft errors due to noise.  
The AT60142FT is processed according to the methods of the latest revision of the  
MIL PRF 38535 or ESCC 9000.  
It is produced on a radiation hardened 0.25 µm CMOS process.  
Rev. 7726A–AERO–07/07  
1

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