Datasheet > 28C256

28C256

更新时间： 2022-11-27 08:59:48

品牌	Logo	应用领域
爱特美尔 - ATMEL		可编程只读存储器
页数	文件大小	规格书
14页	765K
描述
256K 32K x 8 Paged CMOS E2PROM

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28C256 数据手册

AT28C256

Features

Fast Read Access Time - 150 ns

Automatic Page Write Operation

•

Internal Address and Data Latches for 64-Bytes

Internal Control Timer

Fast Write Cycle Times

•

Page Write Cycle Time: 3 ms or 10 ms Maximum

1 to 64-Byte Page Write Operation

Low Power Dissipation

•

50 mA Active Current

256K (32K x 8)

Paged

200 µA CMOS Standby Current

Hardware and Software Data Protection

DATA Polling for End of Write Detection

•

High Reliability CMOS Technology

Endurance: 10⁴or 10⁵Cycles

Data Retention: 10 Years

CMOS

E²PROM

Single 5V ± 10% Supply

CMOS and TTL Compatible Inputs and Outputs

JEDEC Approved Byte-Wide Pinout

Full Military, Commercial, and Industrial Temperature Ranges

•

Description

The AT28C256 is a high-performance Electrically Erasable and Programmable Read

Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-

tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access

times to 150 ns with power dissipation of just 440 mW. When the device is deselected,

the CMOS standby current is less than 200 µA.

(continued)

Pin Configurations

TSOP

Top View

Pin Name

A0 - A14

Function

AT28C256

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

I/O0 - I/O7

Don’t Connect

CERDIP, PDIP,

FLATPACK, SOIC

Top View

LCC, PLCC

Top View

PGA

Top View

Note: PLCC package pins 1 and

17 are DON’T CONNECT.

0006F

2-217

12 3 4 5 6 7...14

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