Document Number: AFT05MS031N
Rev. 0, 6/2012
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel
AFT05MS031NR1
AFT05MS031GNR1
Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from
136 to 520 MHz. The high gain, ruggedness and broadband performance of
these devices make them ideal for large--signal, common source amplifier
applications in mobile radio equipment.
136--520 MHz, 31 W, 13.6 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
Typical Performance: (13.6 Vdc, T = 25°C, CW)
A
Frequency
(MHz)
G
η
P1dB
(W)
ps
D
(dB)
18.3
17.7
17.7
(%)
64.1
62.0
71.4
(1,3)
380--450
31
31
33
(2,3)
450--520
(4)
520
T O -- 2 7 0 -- 2
PLASTIC
Load Mismatch/Ruggedness
AFT05MS031NR1
Signal
Type
Frequency
(MHz)
P
(W)
Test
Voltage
out
VSWR
Result
(4)
520
CW
>65:1 at all
47
17
No Device
Phase Angles
(3 dB Overdrive)
Degradation
1. Measured in 380--450 MHz UHF wideband reference circuit.
2. Measured in 450--520 MHz UHF wideband reference circuit.
3. The values shown are the minimum measured performance numbers across the
indicated frequency range.
T O -- 2 7 0 -- 2 G U L L
PLASTIC
AFT05MS031GNR1
4. Measured in 520 MHz narrowband test circuit.
Features
•
•
•
•
•
Characterized for Operation from 136 to 520 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band:
− 136--174 MHz
Gate
Drain
− 380--450 MHz
− 450--520 MHz
•
•
•
•
•
225°C Capable Plastic Package
Exceptional Thermal Performance
High Linearity for: TETRA, SSB, LTE
Cost--effective Over--molded Plastic Packaging
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
Typical Applications
•
•
Output Stage VHF Band Mobile Radio
Output Stage UHF Band Mobile Radio
AFT05MS031NR1 AFT05MS031GNR1
© Freescale Semiconductor, Inc., 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
1