Datasheet > ATC600F100JT250XT

ATC600F100JT250XT

更新时间： 2024-11-26 12:20:55

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管
页数	文件大小	规格书
21页	985K
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RF Power LDMOS Transistors

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Document Number: AFT09MS031N

Rev. 0, 5/2012

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

High Ruggedness N--Channel

AFT09MS031NR1

AFT09MS031GNR1

Enhancement--Mode Lateral MOSFETs

Designed for mobile two--way radio applications with frequencies from

764 to 941 MHz. The high gain, ruggedness and broadband performance of

these devices make them ideal for large--signal, common source amplifier

applications in mobile radio equipment.

764--941 MHz, 31 W, 13.6 V

WIDEBAND

RF POWER LDMOS TRANSISTORS

Narrowband Performance (13.6 Vdc, I = 500 mA, T = 25°C, CW)

Frequency

(MHz)

P1dB

(W)

(dB)

18.0

17.2

15.7

(%)

74.1

71.0

68.1

764

870

941

T O -- 2 7 0 -- 2

PLASTIC

800 MHz Broadband Performance (13.6 Vdc, I = 100 mA, T = 25°C, CW)

AFT09MS031NR1

Frequency

(MHz)

P1dB

(W)

(dB)

15.7

15.5

(%)

62.0

63.0

61.0

760

820

870

T O -- 2 7 0 -- 2 G U L L

PLASTIC

AFT09MS031GNR1

Load Mismatch/Ruggedness

Frequency Signal

Test

out

(MHz)

Type

VSWR

(W)

Voltage

Result

870

>65:1 at all

No Device

Phase Angles

(3 dB Overdrive)

Degradation

Features

•

Characterized for Operation from 764 to 941 MHz

Unmatched Input and Output Allowing Wide Frequency Range Utilization

Integrated ESD Protection

Integrated Stability Enhancements

Wideband — Full Power Across the Band (764–870 MHz)

225°C Capable Plastic Package

Exceptional Thermal Performance

High Linearity for: TETRA, SSB, LTE

Cost--effective Over--molded Plastic Packaging

In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.

Gate

Drain

(Top View)

Note: The backside of the package is the

source terminal for the transistor.

Figure 1. Pin Connections

Typical Applications

•

Output Stage 800 MHz Trunking Band Mobile Radio

Output Stage 900 MHz Trunking Band Mobile Radio

AFT09MS031NR1 AFT09MS031GNR1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...21

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