Datasheet > ATC600F0R7BT250XT

ATC600F0R7BT250XT

更新时间： 2024-11-27 02:52:27

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
9页	188K
描述
RF Power GaN Transistor

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Document Number: A2G22S190--01S

Rev. 0, 09/2018

NXP Semiconductors

Technical Data

RF Power GaN Transistor

This 36 W RF power GaN transistor is designed for cellular base station

applications covering the frequency range of 1800 to 2200 MHz.

A2G22S190--01SR3

This part is characterized and performance is guaranteed for applications

operating in the 1800 to 2200 MHz band. There is no guarantee of performance

when this part is used in applications designed outside of these frequencies.

1800–2200 MHz, 36 W AVG., 48 V

AIRFAST RF POWER GaN

TRANSISTOR

2000 MHz



Typical Single--Carrier W--CDMA Performance: V_DD= 48 Vdc,

I_DQ= 200 mA, P_out= 36 W Avg., Input Signal PAR = 9.9 dB @ 0.01%

Probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

1805 MHz

1990 MHz

2170 MHz

(dB)

16.5

17.3

16.8

(%)

36.2

37.2

38.5

7.1

6.9

6.7

–33.8

–33.2

–32.6

–6

–11

–7

NI--400S--2S

Features



High terminal impedances for optimal broadband performance

Designed for digital predistortion error correction systems

Optimized for Doherty applications

RF /V

in GS

RF /V

out DS

(Top View)

Figure 1. Pin Connections

 2018 NXP B.V.

A2G22S190--01SR3

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...9

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