是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | MSOP | 包装说明: | HVSON, SOLCC8,.2,25 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.51 |
风险等级: | 5.78 | 备用内存宽度: | 8 |
最大时钟频率 (fCLK): | 0.25 MHz | 数据保留时间-最小值: | 100 |
耐久性: | 1000000 Write/Erase Cycles | JESD-30 代码: | R-XDSO-N8 |
JESD-609代码: | e0 | 长度: | 4.9 mm |
内存密度: | 4096 bit | 内存集成电路类型: | EEPROM |
内存宽度: | 16 | 湿度敏感等级: | 1 |
功能数量: | 1 | 端子数量: | 8 |
字数: | 256 words | 字数代码: | 256 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 256X16 |
封装主体材料: | UNSPECIFIED | 封装代码: | HVSON |
封装等效代码: | SOLCC8,.2,25 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 并行/串行: | SERIAL |
峰值回流温度(摄氏度): | 240 | 电源: | 2/5 V |
认证状态: | Not Qualified | 座面最大高度: | 0.9 mm |
串行总线类型: | MICROWIRE | 最大待机电流: | 1e-7 A |
子类别: | EEPROMs | 最大压摆率: | 0.002 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 1.8 V |
标称供电电压 (Vsup): | 2.7 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | NO LEAD |
端子节距: | 0.65 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 宽度: | 3 mm |
最长写入周期时间 (tWC): | 10 ms | 写保护: | SOFTWARE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AT93C66AY1-10YI-2.7 | ATMEL |
获取价格 |
3-wire Serial EEPROMs 2K (256 x 8 or 128 x 16) | |
AT93C66AY1-10YU-1.8 | ATMEL |
获取价格 |
Three-wire Serial EEPROM | |
AT93C66AY1-10YU-2.7 | MICROCHIP |
获取价格 |
EEPROM, 256X16, Serial | |
AT93C66AY6-10YH-1.8 | ATMEL |
获取价格 |
Three-wire Serial EEPROM | |
AT93C66B | MICROCHIP |
获取价格 |
The Microchip AT93C66B is a 4 Kb Microwire (3-wire) SerialEEPROM organized as either 512 x | |
AT93C66B_14 | ATMEL |
获取价格 |
3-wire Serial EEPROM | |
AT93C66B-CUM-T | ATMEL |
获取价格 |
Three-wire Serial Electrically Erasable Programmable Read-only Memory | |
AT93C66B-MAHM-T | ATMEL |
获取价格 |
Three-wire Serial Electrically Erasable Programmable Read-only Memory | |
AT93C66B-MEHM-T | ATMEL |
获取价格 |
Three-wire Serial Electrically Erasable Programmable Read-only Memory | |
AT93C66B-SSHM-B | ATMEL |
获取价格 |
Three-wire Serial Electrically Erasable Programmable Read-only Memory |