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AT900801 PDF预览

AT900801

更新时间: 2024-11-25 18:35:43
品牌 Logo 应用领域
ASI 二极管变容二极管
页数 文件大小 规格书
3页 122K
描述
Variable Capacitance Diode, L Band, 3.9pF C(T), 90V, Silicon, Abrupt,

AT900801 技术参数

生命周期:Active包装说明:O-XALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.69
最小击穿电压:90 V外壳连接:ISOLATED
配置:SINGLE二极管电容容差:10%
最小二极管电容比:8.6标称二极管电容:3.9 pF
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
频带:L BANDJESD-30 代码:O-XALF-W2
元件数量:1端子数量:2
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最小质量因数:800表面贴装:NO
端子形式:WIRE端子位置:AXIAL
变容二极管分类:ABRUPTBase Number Matches:1

AT900801 数据手册

 浏览型号AT900801的Datasheet PDF文件第2页浏览型号AT900801的Datasheet PDF文件第3页 

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