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AT900621 PDF预览

AT900621

更新时间: 2024-11-28 03:25:59
品牌 Logo 应用领域
ASI 二极管变容二极管
页数 文件大小 规格书
3页 119K
描述
Variable Capacitance Diode, L Band to S Band, 2.7pF C(T), 90V, Silicon, Abrupt,

AT900621 技术参数

生命周期:Active包装说明:O-CXMW-F2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.69
最小击穿电压:90 V二极管电容容差:10%
最小二极管电容比:8.2标称二极管电容:2.7 pF
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
频带:L BAND TO S BANDJESD-30 代码:O-CXMW-F2
端子数量:2封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:MICROWAVE
认证状态:Not Qualified最小质量因数:850
表面贴装:YES端子形式:FLAT
端子位置:UNSPECIFIED变容二极管分类:ABRUPT
Base Number Matches:1

AT900621 数据手册

 浏览型号AT900621的Datasheet PDF文件第2页浏览型号AT900621的Datasheet PDF文件第3页 

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