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AT88SC1003-09CT-00 PDF预览

AT88SC1003-09CT-00

更新时间： 2024-11-23 23:32:59
品牌 Logo 应用领域
其他 - ETC 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
31页 340K
描述
EEPROM

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中文翻译

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AT88SC1003-09CT-00 数据手册

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Features  
• Compatible with Many Existing Memory Card Applications  
• 1-Kbit EEPROM User Memory  
– Two 256 x 1 Application Zones  
– One 512 x 1 Application Zone  
– Protected by Security Logic  
– Vpp Internally Generated for Single Voltage Operation  
– 2 µs Read Access Time  
– 2 ms Write Cycle (Self-timed)  
• Additional EEPROM Memory for Code Storage  
– Three OTP Areas, 144 Bits Total  
– 64-bit Code-protected Zone  
• Security Features  
– Stores and Validates Security Codes  
– Maximum of Four Incorrect Security Code Attempts  
– Provides Security Code Protection During Transportation  
• High Reliability  
– Endurance: 100,000 Cycles  
– Data Retention: 10 Years  
– ESD Protection: 4,000V Minimum  
• Manufactured Using Low-power CMOS Technology  
• Temperature Range from −25°C to +85°C  
• ISO 7816-compliant Card Modules  
1K Secure  
EEPROM  
with Three  
Application  
Zones  
AT88SC1003  
Description  
The AT88SC1003 is a low-cost synchronous integrated circuit, designed for use in  
prepaid and loyalty smart card applications. The AT88SC1003 provides 1024 bits of  
serial EEPROM (Electrically Erasable and Programmable Read Only Memory) within  
three application zones, plus 64 bits in a code-protected zone. Security logic provides  
access protection through use of a 16-bit security code.  
Additional EEPROM memory is available to hold unalterable information about the  
card history. Separate zones are available for data written by the fabrication facility,  
card manufacturer and card issuer. After personalization of the memory by the issuer,  
an internal fuse is blown that secures critical memory areas of the device and config-  
ures the IC for use by the end customer. The action of blowing this fuse is irreversible.  
The AT88SC1003 is manufactured using low-power CMOS technology. EEPROM  
programming functions are accomplished using an internally generated high-voltage  
pump for single voltage supply operation. Program timing is controlled internally.  
Memory endurance is guaranteed to 100,000 erase/write cycles. Ten-year data reten-  
tion is guaranteed.  
Table 1. Pin Configuration  
Pad  
VCC  
GND  
CLK  
I/O  
Description  
ISO Module Contact  
Supply Voltage  
Ground  
C1  
C5  
C3  
C7  
C2  
C8  
C4  
Serial Clock Input  
Serial Data Input/Output  
Reset Input  
RST  
PGM  
FUS  
Program Input  
Fuse Input  
Rev. 2035A–SMEM–4/02  
1234567...31

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