Datasheet > AT80N06S

AT80N06S

更新时间： 2024-11-28 18:07:07

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AT80N06S 数据手册

AT80N06S

N-Channel Enhancement Mode Power MOSFET

Product Summary

V_(BR)DSS

R_DS(on)MAX

8.0mΩ@10V

9.5mΩ@4.5V

I_D

60V

80A

Feature

Application

High density cell design for ultra low Rdson

PWM

Fully characterized avalanche voltage and current

Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

Load Switching

Package

Circuit diagram

TO-220AB

Marking

T80N06

XXXXX

Document ID

AS-3150145

Issued Date

2003/03/08

Revised Date

2012/05/16

Revision

Page.

Page 1

12 3 4 5 6

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