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AT49LV002-12VI PDF预览

AT49LV002-12VI

更新时间: 2024-11-23 23:04:27
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存电池
页数 文件大小 规格书
20页 174K
描述
2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory

AT49LV002-12VI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:8 X 14 MM, VSOP-32
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.76最长访问时间:120 ns
启动块:BOTTOM命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PDSO-G32
JESD-609代码:e0长度:12.4 mm
内存密度:2097152 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:1,2,1,1端子数量:32
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP32,.56,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm部门规模:16K,8K,96K,128K
最大待机电流:0.00005 A子类别:Flash Memories
最大压摆率:0.05 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:8 mm

AT49LV002-12VI 数据手册

 浏览型号AT49LV002-12VI的Datasheet PDF文件第2页浏览型号AT49LV002-12VI的Datasheet PDF文件第3页浏览型号AT49LV002-12VI的Datasheet PDF文件第4页浏览型号AT49LV002-12VI的Datasheet PDF文件第5页浏览型号AT49LV002-12VI的Datasheet PDF文件第6页浏览型号AT49LV002-12VI的Datasheet PDF文件第7页 
Features  
Single Supply for Read and Write: 2.7V to 3.6 (BV), 3.0 to 3.6V (LV)  
Fast Read Access Time - 70 ns  
Internal Program Control and Timer  
Sector Architecture  
– One 16K Byte Boot Block with Programming Lockout  
– Two 8K Byte Parameter Blocks  
– Two Main Memory Blocks (96K, 128K) Bytes  
Fast Erase Cycle Time - 10 seconds  
Byte By Byte Programming - 30 µs/Byte Typical  
Hardware Data Protection  
DATA Polling For End Of Program Detection  
Low Power Dissipation  
2-Megabit  
(256K x 8)  
– 25 mA Active Current  
– 50 µA CMOS Standby Current  
Single 2.7-Volt  
Battery-Voltage™  
Flash Memory  
Typical 10,000 Write Cycles  
Description  
The AT49BV/LV002(N)(T) is a 3-volt-only in-system reprogrammable Flash Memory.  
Its 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with  
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70  
ns with power dissipation of just 90 mW over the commercial temperature range.  
When the device is deselected, the CMOS standby current is less than 50 µA. For the  
AT49BV002  
(continued)  
AT49LV002  
DIP Top View  
Pin Configurations  
AT49BV002N  
AT49LV002N  
AT49BV002T  
AT49LV002T  
AT49BV002NT  
AT49LV002NT  
*RESET  
A16  
A15  
A12  
A7  
1
2
3
4
5
6
7
8
9
32 VCC  
31 WE  
30 A17  
29 A14  
28 A13  
27 A8  
Pin Name  
A0 - A17  
CE  
Function  
Addresses  
A6  
Chip Enable  
Output Enable  
Write Enable  
RESET  
A5  
26 A9  
A4  
25 A11  
24 OE  
23 A10  
22 CE  
21 I/O7  
20 I/O6  
19 I/O5  
18 I/O4  
17 I/O3  
OE  
A3  
A2 10  
A1 11  
WE  
A0 12  
I/O0 13  
I/O1 14  
I/O2 15  
GND 16  
RESET  
I/O0 - I/O7  
DC  
Data Inputs/Outputs  
Don’t Connect  
VSOP Top View (8 x 14 mm) or  
TSOP Top View (8 x 20 mm)  
Type 1  
PLCC Top View  
A11  
A9  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
OE  
2
A10  
CE  
A8  
3
A13  
A14  
A17  
WE  
4
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
GND  
I/O2  
I/O1  
I/O0  
A0  
A7  
A6  
A5  
A4  
A3  
5
6
7
8
9
29 A14  
28 A13  
27 A8  
26 A9  
25 A11  
24 OE  
23 A10  
22 CE  
21 I/O7  
5
6
7
VCC  
*RESET  
A16  
A15  
A12  
A7  
8
9
10  
11  
12  
13  
14  
15  
16  
A2 10  
A1 11  
A0 12  
I/O0 13  
A6  
A1  
A5  
A2  
A4  
A3  
Rev. 0982C–07/98  
*Note: This pin is a DC on the AT49BV002N(T) and AT49LV002N(T).  

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