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AT49HLV010-90TC PDF预览

AT49HLV010-90TC

更新时间： 2024-11-30 22:33:31
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存电池
页数 文件大小 规格书
11页 91K
描述
1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory

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中文翻译

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AT49HLV010-90TC 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSOP1包装说明：20 X 8 MM, PLASTIC, MO-142BD, TSOP-32
针数：32Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.91最长访问时间：90 ns
启动块：BOTTOM命令用户界面：YES
数据轮询：YESJESD-30 代码：R-PDSO-G32
JESD-609代码：e0长度：18.4 mm
内存密度：1048576 bit内存集成电路类型：FLASH
内存宽度：8湿度敏感等级：3
功能数量：1部门数/规模：1,1
端子数量：32字数：131072 words
字数代码：128000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：128KX8封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TSSOP32,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行：PARALLEL电源：3.3 V
编程电压：3 V认证状态：Not Qualified
座面最大高度：1.2 mm部门规模：8K,120K
最大待机电流：0.00005 A子类别：Flash Memories
最大压摆率：0.05 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：3 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL切换位：YES
类型：NOR TYPE宽度：8 mm
Base Number Matches：1

AT49HLV010-90TC 数据手册

 浏览型号AT49HLV010-90TC的Datasheet PDF文件第2页浏览型号AT49HLV010-90TC的Datasheet PDF文件第3页浏览型号AT49HLV010-90TC的Datasheet PDF文件第4页浏览型号AT49HLV010-90TC的Datasheet PDF文件第5页浏览型号AT49HLV010-90TC的Datasheet PDF文件第6页浏览型号AT49HLV010-90TC的Datasheet PDF文件第7页 
Features  
• Single Supply Voltage, Range 2.7V to 3.6V  
• Single Supply for Read and Write  
• Fast Read Access Time - 55 ns  
• Internal Program Control and Timer  
• 8K bytes Boot Block With Lockout  
• Fast Erase Cycle Time - 10 seconds  
• Byte By Byte Programming - 30 µs/Byte typical  
• Hardware Data Protection  
• DATA Polling For End Of Program Detection  
• Low Power Dissipation  
– 25 mA Active Current  
– 50 µA CMOS Standby Current  
• Typical 10,000 Write Cycles  
1-Megabit  
(128K x 8)  
Single 2.7-volt  
Battery-Voltage™  
Flash Memory  
Description  
The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memo-  
ries organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced  
nonvolatile CMOS technology, the devices offer access times to 55 ns with power dis-  
sipation of just 90 mW over the commercial temperature range. When the devices are  
deselected, the CMOS standby current is less than 50 µA.  
To allow for simple in-system reprogrammability, the AT49(H)BV/(H)LV010 does not  
require high input voltages for programming. Three-volt-only commands determine  
the read and programming operation of the device. Reading data out of the device is  
similar to reading from an EPROM. Reprogramming the AT49(H)BV/(H)LV010 is  
performed by erasing the entire 1 megabit of memory and then programming on a  
byte by byte basis. The typical byte programming time is a fast 30 µs. The end of a  
program cycle can be optionally detected by the DATA polling feature. Once the end  
of a byte program cycle has been detected, a new access for a read or program can  
begin. The typical number of program and erase cycles is in excess of 10,000 cycles.  
AT49BV010  
AT49HBV010  
AT49LV010  
AT49HLV010  
(continued)  
Pin Configurations  
Pin Name  
A0 - A16  
CE  
Function  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
OE  
WE  
I/O0 - I/O7  
NC  
TSOP Top View  
Type 1  
PLCC Top View  
A11  
A9  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
OE  
2
A10  
CE  
A8  
3
A13  
A14  
NC  
WE  
VCC  
NC  
A16  
A15  
A12  
A7  
4
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
GND  
I/O2  
I/O1  
I/O0  
A0  
5
A7  
A6  
A5  
A4  
A3  
5
6
7
8
9
29 A14  
28 A13  
27 A8  
26 A9  
25 A11  
24 OE  
23 A10  
22 CE  
21 I/O7  
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
A2 10  
A1 11  
A0 12  
I/O0 13  
A6  
A1  
0677B-A–9/97  
A5  
A2  
A4  
A3  
1234567...11

中文翻译

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与AT49HLV010-90TC相关器件

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AT49HLV010-90TI ATMEL

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 		1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
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 		Flash, 128KX8, 90ns, PDSO32, 14 X 8 MM, PLASTIC, VSOP-32
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 		Flash, 128KX8, 90ns, PDSO32, 14 X 8 MM, PLASTIC, VSOP-32
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 		32-megabit (1M x 32 or 2M x 16) High-speed Synchronous Flash Memory
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AT49LD3200-10TC ATMEL

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 		32-megabit (1M x 32 or 2M x 16) High-speed Synchronous Flash Memory
AT49LD3200-13TC ATMEL

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 		32-megabit (1M x 32 or 2M x 16) High-speed Synchronous Flash Memory
AT49LD3200-13TI ATMEL

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 		32-megabit (1M x 32 or 2M x 16) High-speed Synchronous Flash Memory

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