Datasheet > AT49HLV010-55VL

AT49HLV010-55VL

更新时间： 2024-12-02 03:01:27

品牌	Logo	应用领域
爱特美尔 - ATMEL		光电二极管
页数	文件大小	规格书
14页	448K
描述
Flash, 128KX8, 55ns, PDSO32, 14 X 8 MM, PLASTIC, VSOP-32

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中文翻译

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数据手册

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AT49HLV010-55VL 数据手册

Features

• Single Supply Voltage, Range 2.7V to 3.6V

• Single Supply for Read and Write

• Fast Read Access Time – 55 ns

• Internal Program Control and Timer

• 8K Bytes Boot Block With Lockout

• Fast Erase Cycle Time – 10 seconds

• Byte-by-byte Programming – 30 µs/Byte typical

• Hardware Data Protection

• DATA Polling for end of Program Detection

• Low Power Dissipation

1-megabit

(128K x 8)

– 25 mA Active Current

– 50 µA CMOS Standby Current

• Typical 10,000 Write Cycles

Single 2.7-volt

Battery-Voltage^™

Flash Memory

Description

The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memo-

ries organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced

nonvolatile CMOS technology, the devices offer access times to 55 ns with power dis-

sipation of just 90 mW over the commercial temperature range. When the devices are

deselected, the CMOS standby current is less than 50 µA.

To allow for simple in-system reprogrammability, the AT49(H)BV/(H)LV010 does not

require high input voltages for programming. Three-volt-only commands determine

the read and programming operation of the device. Reading data out of the device is

similar to reading from an EPROM. Reprogramming the AT49(H)BV/(H)LV010 is per-

formed by erasing the entire 1 megabit of memory and then programming on a byte by

byte basis. The typical byte programming time is a fast 30 µs. The end of a program

cycle can be optionally detected by the DATA polling feature. Once the end of a byte

program cycle has been detected, a new access for a read or program can begin.

The typical number of program and erase cycles is in excess of 10,000 cycles.

AT49BV010

AT49HBV010

AT49LV010

AT49HLV010

Not Recommended

(continued)

Pin Configurations

for New Design

Contact Atmel to discuss

the latest design in trends

and options

Pin Name

A0 - A16

Function

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

VSOP Top View (8 x 14 mm) or

I/O0 - I/O7

TSOP Top View (8 x 20 mm)

Type 1

A11

PLCC Top View

A10

A13

A14

VCC

A16

A15

A12

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

29 A14

28 A13

27 A8

26 A9

25 A11

24 OE

23 A10

22 CE

21 I/O7

A2 10

A1 11

A0 12

I/O0 13

Rev. 0677E–11/99

12 3 4 5 6 7...14

中文翻译

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与AT49HLV010-55VL相关器件

型号	品牌	获取价格	描述	数据表
AT49HLV010-70JC	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49HLV010-70JI	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49HLV010-70TC	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49HLV010-70TI	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49HLV010-70VC	ATMEL	获取价格	Flash, 128KX8, 70ns, PDSO32, 14 X 8 MM, PLASTIC, VSOP-32
AT49HLV010-70VI	ETC	获取价格	x8 Flash EEPROM
AT49HLV010-90JC	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49HLV010-90JI	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49HLV010-90JL	ATMEL	获取价格	Flash, 128KX8, 90ns, PQCC32, PLASTIC, LCC-32
AT49HLV010-90TC	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory

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