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AT49F512-70JC PDF预览

AT49F512-70JC

更新时间: 2024-11-23 22:56:39
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存
页数 文件大小 规格书
11页 181K
描述
512K 64K x 8 5-volt Only Flash Memory

AT49F512-70JC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFJ包装说明:PLASTIC, MS-016AE, LCC-32
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.81Samacsys Description:IC FLASH 512KBIT PARALLEL 32PLCC
最长访问时间:70 ns其他特性:HARDWARE DATA PROTECTION
启动块:BOTTOM命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PQCC-J32
JESD-609代码:e0长度:13.97 mm
内存密度:524288 bit内存集成电路类型:FLASH
内存宽度:8湿度敏感等级:2
功能数量:1部门数/规模:1,1
端子数量:32字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64KX8封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC32,.5X.6
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:3.55 mm
部门规模:8K,56K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30切换位:YES
类型:NOR TYPE宽度:11.43 mm

AT49F512-70JC 数据手册

 浏览型号AT49F512-70JC的Datasheet PDF文件第2页浏览型号AT49F512-70JC的Datasheet PDF文件第3页浏览型号AT49F512-70JC的Datasheet PDF文件第4页浏览型号AT49F512-70JC的Datasheet PDF文件第5页浏览型号AT49F512-70JC的Datasheet PDF文件第6页浏览型号AT49F512-70JC的Datasheet PDF文件第7页 
Features  
Single Voltage Operation  
– 5V Read  
– 5V Reprogramming  
Fast Read Access Time - 70 ns  
Internal Program Control and Timer  
8K bytes Boot Block With Lockout  
Fast Erase Cycle Time - 10 seconds  
Byte By Byte Programming - 10 µs/Byte  
Hardware Data Protection  
DATA Polling For End Of Program Detection  
Low Power Dissipation  
– 30 mA Active Current  
– 100 µA CMOS Standby Current  
Typical 10,000 Write Cycles  
512K (64K x 8)  
5-volt Only  
Flash Memory  
Description  
The AT49F512 is a 5-volt-only in-system programmable and erasable Flash Memory.  
Its 512K of memory is organized as 65,536 words by 8 bits. Manufactured with  
Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 70  
ns with a power dissipation of just 165 mW over the commercial temperature range.  
When the device is deselected, the CMOS standby current is less than 100 µA.  
AT49F512  
To allow for simple in-system reprogrammability, the AT49F512 does not require high  
input voltages for programming. Five-volt-only commands determine the read and  
programming operation of the device. Reading data out of the device is similar to  
reading from an EPROM. Reprogramming the AT49F512 is performed by erasing the  
entire 512K of memory and then programming on a byte by byte basis. The typical  
byte programming time is a fast 10 µs. The end of a program cycle can be optionally  
(continued)  
Pin Configurations  
DIP Top View  
Pin Name  
A0 - A15  
CE  
Function  
NC  
NC  
A15  
A12  
A7  
1
2
3
4
5
6
7
8
9
32 VCC  
31 WE  
30 NC  
29 A14  
28 A13  
27 A8  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
A6  
OE  
A5  
26 A9  
A4  
25 A11  
24 OE  
23 A10  
22 CE  
21 I/O7  
20 I/O6  
19 I/O5  
18 I/O4  
17 I/O3  
512K (64K x 8)  
5-volt Only  
CMOS Flash  
Memory  
A3  
WE  
A2 10  
A1 11  
I/O0 - I/O7  
NC  
A0 12  
I/O0 13  
I/O1 14  
I/O2 15  
GND 16  
VSOP Top View (8 x 14 mm) or  
TSOP Top View (8 x 20 mm)  
Type 1  
PLCC Top View  
A11  
A9  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
OE  
2
A10  
CE  
A8  
3
A7  
A6  
A5  
A4  
A3  
5
6
7
8
9
29 A14  
A13  
A14  
NC  
WE  
VCC  
NC  
NC  
A15  
A12  
A7  
4
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
GND  
I/O2  
I/O1  
I/O0  
A0  
28 A13  
27 A8  
26 A9  
25 A11  
24 OE  
23 A10  
22 CE  
21 I/O7  
5
6
7
8
A2 10  
A1 11  
A0 12  
I/O0 13  
9
10  
11  
12  
13  
14  
15  
16  
Rev. 1027C–09/98  
A6  
A1  
A5  
A2  
A4  
A3  

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