Features
• Single Voltage Operation
– 5V Read
– 5V Reprogramming
• Fast Read Access Time - 90 ns
• Internal Erase/Program Control
• Sector Architecture
– One 8K Words (16K Bytes) Boot Block with Programming Lockout
– Two 8K Words (16K Bytes) Parameter Blocks
– One 232K Words (464K Bytes) Main Memory Array Block
• Fast Sector Erase Time - 10 seconds
• Word-By-Word Programming - 50 µs/Word
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
– 50 mA Active Current
– 300 µA CMOS Standby Current
• Typical 10,000 Write Cycles
4-Megabit
(256K x 16)
5-volt Only
Flash Memory
Description
The AT49F4096 is a 5-volt only, 4-megabit Flash Memory organized as 256K words of
16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the
device offers access times to 90 ns with power dissipation of just 275 mW. When
AT49F4096
Not Recommended
for New Design
Contact Atmel to discuss
the latest design in trends
and options
deselected, the CMOS standby current is less than 300 µA.
(continued)
Pin Configurations
Pin Name
A0 - A17
CE
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
OE
WE
TSOP Top View
RESET
I/O0 - I/O15
NC
Type 1
Data Inputs/Outputs
No Connect
A15
A14
A13
A12
A11
A10
A9
1
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
2
NC
3
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
SOIC (SOP)
4
5
NC
NC
1
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
RESET
WE
6
2
7
A17
A7
3
A8
A8
8
4
A9
NC
9
A6
5
A10
NC
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A5
6
A11
WE
RESET
NC
A4
7
A12
A3
8
A13
A2
9
A14
NC
A1
10
11
12
13
14
15
16
17
18
19
20
21
22
A15
NC
A0
A16
NC
CE
NC
A17
A7
GND
OE
GND
I/O15
I/O7
1/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
A6
I/O0
I/O8
I/O1
I/O9
I/O2
I/O10
I/O3
I/O11
A5
A4
A3
GND
CE
A2
Rev. 0569F–12/98
A1
A0
1