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AT49F040A-55JJ PDF预览

AT49F040A-55JJ

更新时间: 2024-11-08 13:05:43
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存存储内存集成电路异步传输模式ATM
页数 文件大小 规格书
16页 264K
描述
暂无描述

AT49F040A-55JJ 数据手册

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Features  
Single-voltage Operation  
– 5V Read  
– 5V Reprogramming  
Fast Read Access Time – 55 ns  
Internal Program Control and Timer  
Sector Architecture  
– One 16K Bytes Boot Block with Programming Lockout  
– Two 8K Bytes Parameter Blocks  
– Eight Main Memory Blocks (One 32K Bytes, Seven 64K Bytes)  
Fast Erase Cycle Time – 6 Seconds  
Byte-by-Byte Programming – 20 µs/Byte Typical  
Hardware Data Protection  
DATA Polling for End of Program Detection  
Low Power Dissipation  
– 20 mA Active Current  
– 70 µA CMOS Standby Current  
Typical 10,000 Write Cycles  
4-megabit  
(512K x 8)  
5-volt Only  
Flash Memory  
Description  
AT49F040A  
The AT49F040A is a 5-volt only in-system reprogrammable Flash memory. Its  
4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with  
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to  
55 ns with power dissipation of just 110 mW over the commercial temperature range.  
Pin Configurations  
Pin Name Function  
TSOP Top View (8 x 20 mm)  
Type 1  
A0 - A18  
CE  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
A11  
A9  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
OE  
2
A10  
CE  
OE  
A8  
3
A13  
A14  
A17  
WE  
VCC  
A18  
A16  
A15  
A12  
A7  
4
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
GND  
I/O2  
I/O1  
I/O0  
A0  
WE  
5
6
I/O0 - I/O7 Data Inputs/Outputs  
7
8
9
10  
11  
12  
13  
14  
15  
16  
PLCC Top View  
A6  
A1  
A5  
A2  
A4  
A3  
A7  
A6  
A5  
A4  
A3  
5
6
7
8
9
29 A14  
28 A13  
27 A8  
26 A9  
25 A11  
24 OE  
23 A10  
22 CE  
21 I/O7  
A2 10  
A1 11  
A0 12  
I/O0 13  
3359B–FLASH–10/04  

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