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AT49F020-70PI PDF预览

AT49F020-70PI

更新时间： 2024-11-23 23:00:35
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存
页数 文件大小 规格书
10页 87K
描述
2-Megabit 256K x 8 5-volt Only CMOS Flash Memory

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中文翻译

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AT49F020-70PI 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：DIP, DIP32,.6Reach Compliance Code：compliant
风险等级：5.92最长访问时间：70 ns
启动块：BOTTOM命令用户界面：YES
数据轮询：YESJESD-30 代码：R-PDIP-T32
JESD-609代码：e0内存密度：2097152 bit
内存集成电路类型：FLASH内存宽度：8
部门数/规模：1,1端子数量：32
字数：262144 words字数代码：256000
最高工作温度：85 °C最低工作温度：-40 °C
组织：256KX8封装主体材料：PLASTIC/EPOXY
封装代码：DIP封装等效代码：DIP32,.6
封装形状：RECTANGULAR封装形式：IN-LINE
并行/串行：PARALLEL电源：5 V
认证状态：Not Qualified部门规模：8K,248K
最大待机电流：0.0003 A子类别：Flash Memories
最大压摆率：0.09 mA标称供电电压 (Vsup)：5 V
表面贴装：NO技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL切换位：YES
类型：NOR TYPE

AT49F020-70PI 数据手册

 浏览型号AT49F020-70PI的Datasheet PDF文件第2页浏览型号AT49F020-70PI的Datasheet PDF文件第3页浏览型号AT49F020-70PI的Datasheet PDF文件第4页浏览型号AT49F020-70PI的Datasheet PDF文件第5页浏览型号AT49F020-70PI的Datasheet PDF文件第6页浏览型号AT49F020-70PI的Datasheet PDF文件第7页 
Features  
• Single Voltage Operation  
– 5V Read  
– 5V Reprogramming  
• Fast Read Access Time - 55 ns  
• Internal Program Control and Timer  
• 8K bytes Boot Block With Lockout  
• Fast Erase Cycle Time - 10 seconds  
• Byte By Byte Programming - 50 µs/Byte  
• Hardware Data Protection  
• DATA Polling For End Of Program Detection  
• Low Power Dissipation  
– 50 mA Active Current  
– 100 µA CMOS Standby Current  
• Typical 10,000 Write Cycles  
2-Megabit  
(256K x 8)  
5-volt Only  
CMOS Flash  
Memory  
Description  
The AT49F020 is a 5-volt-only in-system Flash Memory. Its 2 megabits of memory is  
organized as 262,144 words by 8 bits. Manufactured with Atmel’s advanced nonvola-  
tile CMOS technology, the device offers access times to 55 ns with power dissipation  
of just 275 mW over the commercial temperature range. When the device is dese-  
lected, the CMOS standby current is less than 100 µA.  
AT49F020  
To allow for simple in-system reprogrammability, the AT49F020 does not require high  
input voltages for programming. Five-volt-only commands determine the read and  
programming operation of the device. Reading data out of the device is similar to  
reading from an EPROM. Reprogramming the AT49F020 is performed by erasing the  
entire 2 megabits of memory and then programming on a byte by byte basis. The byte  
programming time is a fast 50 µs. The end of a program cycle can be optionally  
detected by the DATA polling feature. Once the end of a byte program cycle has been  
detected, a new access for a read or program can begin. The typical number of pro-  
gram and erase cycles is in excess of 10,000 cycles.  
(continued)  
DIP Top View  
Pin Configurations  
NC  
A16  
A15  
A12  
A7  
1
2
3
4
5
6
7
8
9
32 VCC  
31 WE  
30 A17  
29 A14  
28 A13  
27 A8  
Pin Name  
A0 - A17  
CE  
Function  
Addresses  
A6  
A5  
26 A9  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
A4  
25 A11  
24 OE  
23 A10  
22 CE  
21 I/O7  
20 I/O6  
19 I/O5  
18 I/O4  
17 I/O3  
A3  
A2 10  
A1 11  
OE  
A0 12  
I/O0 13  
I/O1 14  
I/O2 15  
GND 16  
WE  
I/O0 - I/O7  
NC  
TSOP Top View  
Type 1  
PLCC Top View  
A11  
A9  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
OE  
2
A10  
CE  
A8  
3
A13  
A14  
A17  
WE  
VCC  
NC  
A16  
A15  
A12  
A7  
4
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
GND  
I/O2  
I/O1  
I/O0  
A0  
5
A7  
A6  
A5  
A4  
A3  
5
6
7
8
9
29 A14  
28 A13  
27 A8  
26 A9  
25 A11  
24 OE  
23 A10  
22 CE  
21 I/O7  
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
A2 10  
A1 11  
A0 12  
I/O0 13  
0567B-A–8/97  
A6  
A1  
A5  
A2  
A4  
A3  
1234567...10

中文翻译

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