Datasheet > 存储 > 闪存> AT49F002-70VC

AT49F002-70VC

更新时间： 2024-11-03 23:04:23

品牌	Logo	应用领域
爱特美尔 - ATMEL		闪存
页数	文件大小	规格书
20页	214K
描述
2-Megabit 256K x 8 5-volt Only Flash Memory

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中文翻译

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数据手册

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AT49F002-70VC 数据手册

Features

• Single-voltage Operation

– 5V Read

– 5V Reprogramming

• Fast Read Access Time – 55 ns

• Internal Program Control and Timer

• Sector Architecture

– One 16K Bytes Boot Block with Programming Lockout

– Two 8K Bytes Parameter Blocks

– Four Main Memory Blocks (One 32K Bytes, Three 64K Bytes)

• Fast Erase Cycle Time – 4 Seconds

• Byte-by-Byte Programming – 20 µs/Byte Typical

• Hardware Data Protection

2-megabit

(256K x 8)

5-volt Only

Flash Memory

• DATA Polling for End of Program Detection

• Low Power Dissipation

– 25 mA Active Current

– 100 µA CMOS Standby Current

• Typical 10,000 Write Cycles

• Green (Pb/Halide-free) Packaging Option

AT49F002A

AT49F002AN

AT49F002AT

AT49F002ANT

1. Description

The AT49F002A(N)(T) is a 5-volt only in-system reprogrammable Flash memory. Its

2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with

Atmel’s advanced nonvolatile CMOS technology, the device offers access times to

55 ns with power dissipation of just 137 mW over the industrial temperature range.

When the device is deselected, the CMOS standby current is less than 100 µA. For

the AT49F002AN(T) pin 1 for the PLCC package and pin 9 for the TSOP package are

no connect pins.

To allow for simple in-system reprogrammability, the AT49F002A(N)(T) does not

require high input voltages for programming. Five-volt-only commands determine the

read and programming operation of the device. Reading data out of the device is sim-

ilar to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus

contention. Reprogramming the AT49F002A(N)(T) is performed by erasing a block of

data and then programming on a byte-by-byte basis. The byte programming time is a

fast 20 µs. The end of a program cycle can be optionally detected by the DATA polling

feature. Once the end of a byte program cycle has been detected, a new access for a

read or program can begin. The typical number of program and erase cycles is in

excess of 10,000 cycles.

The device is erased by executing the erase command sequence; the device inter-

nally controls the erase operations. There are two 8K byte parameter block sections,

four main memory blocks, and one boot block.

The device has the capability to protect the data in the boot block; this feature is

enabled by a command sequence. The 16K-byte boot block section includes a repro-

gramming lock out feature to provide data integrity. The boot sector is designed to

contain user secure code, and when the feature is enabled, the boot sector is pro-

tected from being reprogrammed.

3354F–FLASH–2/05

12 3 4 5 6 7...20

中文翻译

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与AT49F002-70VC相关器件

型号	品牌	获取价格	描述	数据表
AT49F002-70VI	ATMEL	获取价格	2-Megabit 256K x 8 5-volt Only Flash Memory
AT49F002-70VJ	ATMEL	获取价格	Flash, 256KX8, 70ns, PDSO32, 8 X 14 MM, PLASTIC, VSOP-32
AT49F002-70VL	ATMEL	获取价格	Flash, 256KX8, 70ns, PDSO32, 8 X 14 MM, PLASTIC, VSOP-32
AT49F002-90JC	ATMEL	获取价格	2-Megabit 256K x 8 5-volt Only Flash Memory
AT49F002-90JI	ATMEL	获取价格	2-Megabit 256K x 8 5-volt Only Flash Memory
AT49F002-90JJ	ATMEL	获取价格	Flash, 256KX8, 90ns, PQCC32, PLASTIC, MS-016AE, LCC-32
AT49F002-90JL	ATMEL	获取价格	Flash, 256KX8, 90ns, PQCC32, PLASTIC, MS-016AE, LCC-32
AT49F002-90PC	ATMEL	获取价格	2-Megabit 256K x 8 5-volt Only Flash Memory
AT49F002-90PI	ATMEL	获取价格	2-Megabit 256K x 8 5-volt Only Flash Memory
AT49F002-90PJ	ATMEL	获取价格	Flash, 256KX8, 90ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32

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